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NTIS 바로가기Thin solid films, v.645, 2018년, pp.154 - 159
Kim, Ji-Hwan (School of Electronic and Electrical Engineering, Sungkyunkwan University) , Park, Eung-Kyu (School of Electronic and Electrical Engineering, Sungkyunkwan University) , Kim, Min Su (School of Electronic and Electrical Engineering, Sungkyunkwan University) , Cho, Hyeong Jun (School of Electronic and Electrical Engineering, Sungkyunkwan University) , Lee, Dong-Hoon (School of Electronic and Electrical Engineering, Sungkyunkwan University) , Kim, Jin-Ho (School of Electronic and Electrical Engineering, Sungkyunkwan University) , Khang, Yoonho (Samsung Display Co., Ltd.) , Park, KeeChan (Department of Electronic Engineering, Konkuk University) , Kim, Yong-Sang (School of Electronic and Electrical Engineering, Sungkyunkwan University)
Abstract We investigated the effect of In and Zn component ratios on an amorphous indium‑gallium‑zinc-oxide (a-IGZO) layer in oxide thin-film transistors (TFTs). Different types of stress including negative bias, positive bias, negative bias illumination stress, positive bias illuminati...
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