[논문]Localized Electrothermal Annealing with Nanowatt Power for a Silicon Nanowire Field-Effect Transistor

Park, Jun-Young; Lee, Byung-Hyun; Lee, Geon-Beom; Bae, Hagyoul; Choi, Yang-Kyu

doi:10.1021/acsami.7b17794

[해외논문] Localized Electrothermal Annealing with Nanowatt Power for a Silicon Nanowire Field-Effect Transistor

ACS applied materials & interfaces, v.10 no.5, 2018년, pp.4838 - 4843

Park, Jun-Young (School of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 34141,) , Lee, Byung-Hyun (School of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 34141,) , Lee, Geon-Beom (School of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 34141,) , Bae, Hagyoul (School of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 34141,) , Choi, Yang-Kyu (School of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 34141,)

Abstract ▼ AI-Helper

This work investigates localized electrothermal annealing (ETA) with extremely low power consumption. The proposed method utilizes, for the first time, tunneling-current-induced Joule heat in a p-i-n diode, consisting of p-type, intrinsic, and n-type semiconductors. The consumed power used for dopant control is the lowest value ever reported. A metal-oxide semiconductor field-effect transistor (MOSFET) composed of a p-i-n silicon nanowire, which is a substructure of a tunneling FET (TFET), was fabricated and utilized as a test platform to examine the annealing behaviors. A more than 2-fold increase in the on-state (I-ON) current was achieved using the ETA. Simulations are conducted to investigate the location of the hot spot and how its change in heat profile activates the dopants.

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참고문헌 (15)

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[해외논문] Localized Electrothermal Annealing with Nanowatt Power for a Silicon Nanowire Field-Effect Transistor

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[해외논문] Localized Electrothermal Annealing with Nanowatt Power for a Silicon Nanowire Field-Effect Transistor

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