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Thin solid films, v.649, 2018년, pp.51 - 56
Qiang, Lei (State Key Lab of Optoelectronics Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University) , Liang, Xiaoci (State Key Lab of Optoelectronics Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University) , Pei, Yanli (State Key Lab of Optoelectronics Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University) , Yao, Ruohe (School of Electronic and Information Engineering, South China University of Technology) , Wang, Gang (State Key Lab of Optoelectronics Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University)
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Abstract In accordance with the positive bias stress (PBS) instability, generalized equations are derived to extract distributions of trap states in indium zinc oxide (IZO) thin film transistors (TFTs) processed by solution method. In this extraction method, densities of both interface trap states ...
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