최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기Journal of alloys and compounds, v.744, 2018년, pp.23 - 33
Kang, Won Jun (Corresponding author.) , Ahn, Cheol Hyoun , Kim, Kyung Su , Jung, Sung Hyeon , Cho, Sung Woon , Cho, Hyung Koun , Kim, Yunseok
Abstract We have developed an “atmospheric steam reforming treatment” technique to obtain high-performance flexible amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) for applications in wearable/imperceptible electronics. The oxide TFTs, using as-grown a-IGZO ...
Nature Kaltenbrunner 432 458 2013 10.1038/nature12314 An ultra-lightweight design for imperceptible plastic electronics
Science Rogers 327 1603 2010 10.1126/science.1182383 Materials and mechanics for stretchable electronics
Adv. Mater. Kim 21 3703 2009 10.1002/adma.200900405 Ultrathin silicon circuits with strain-isolation layers and mesh layouts for high-performance electronics on fabric, vinyl, leather, and paper
ECS Trans. Kumomi 67 3 2015 10.1149/06701.0003ecst Advances in oxide thin-film transistors in recent decade and future
Adv. Mater. Drack 27 34 2015 10.1002/adma.201403093 An imperceptible plastic electronic wrap
Nat. Commun. Salvatore 5 2982 2014 10.1038/ncomms3982 Wafer-scale design of lightweight and transparent electronics that wraps around hairs
IEEE Electron. Device Lett. Chen 32 1552 2011 10.1109/LED.2011.2165694 Oxygen-dependent instability and annealing/passivation effects in amorphous In-Ga-Zn-O thin-film transistors
J. Disp. Technol. Kamiya 5 273 2009 10.1109/JDT.2009.2021582 Origins of high mobility and low operation voltage of amorphous oxide TFTs: electronic structure, electron transport, defects and doping
Sci. Rep. Kim 6 26287 2016 10.1038/srep26287 Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness
IEEE Electron. Device Lett. Fuh 35 1103 2014 10.1109/LED.2014.2354598 Effect of annealing on defect elimination for high mobility amorphous Indium-Zinc-Tin-Oxide thin-film transistor
Appl. Phys. Lett. Nomura 93 2008 10.1063/1.3020714 Defect passivation and homogenization of amorphous oxide thin-film transistors by wet O2 annealing
Appl. Phys. Lett. Nomura 95 2009 10.1063/1.3159831 Origin of threshold voltage shifts in room-temperature deposited and annealed a-In-Ga-Zn-O thin film transistors
J. Electroceram. Park 32 117 2014 10.1007/s10832-013-9858-0 Overview of electroceramic materials for oxide semiconductor thin film transistors
ACS Nano Chang 7 5446 2013 10.1021/nn401429w High-performance, highly bendable MoS2 transistors with high-K dielectrics for flexible low-power systems
J. Mater. Chem. Jeong 22 1243 2012 10.1039/C1JM14452A Low-temperature, solution-processed metal oxide thin film transistors
Nature Kim 489 128 2012 10.1038/nature11434 Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films
Appl. Phys. Lett. Teng 101 132901 2012 10.1063/1.4754627 Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor
Electrochem. Solid State Lett. Remashan 11 H55 2008 10.1149/1.2822885 Effect of N2O plasma treatment on the performance of ZnO TFTs
IEEE Trans. Electron. Dev. Ahn 61 4132 2014 10.1109/TED.2014.2359469 The influence of oxygen high-pressure annealing on the performance and bias instability of amorphous Ge-In-Ga-O thin-film transistors
Jpn. J. Appl. Phys. Uraoka 45 5657 2006 10.1143/JJAP.45.5657 Improvement of reliability in low-temperature polycrystalline silicon thin-film transistors by water vapor annealing
RSC Adv. Kang 6 63418 2016 10.1039/C6RA06372A Expedient floating process for ultra-thin InGaZnO thin-film-transistors and their high bending performance
Optic Express Chen 18 1398 2010 10.1364/OE.18.001398 InGaZnO semiconductor thin film fabricated using pulsed laser deposition
Nanoscale Res. Lett. Xiang 10 137 2015 10.1186/s11671-015-0798-2 Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si(i)/Al2O3 surface passivation stacks
RSC Adv. Kim 6 53310 2016 10.1039/C6RA09684K Chemical robust solution-processed indium zinc oxide thin film transistors fabricated by back channel wet-etched Mo electrodes
J. Vac. Sci. Technol. A Yota 31 2013 10.1116/1.4769207 Characterization of atomic layer deposition HfO2, Al2O3, and plasma enhanced chemical vapor deposition Si3N4 as metal-insulator-metal capacitor dielectric for GaAs HBT technology
Appl. Phys. Lett. Xuan 88 2006 10.1063/1.2217258 Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric
Mater. Sci. Appl. Cimalla 5 628 2014 Densification of thin aluminum oxide films by thermal treatments
Appl. Phys. Lett. Nomura 99 2011 10.1063/1.3622121 Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by elimination deep subgap defects
ACS Appl. Mater. Interfaces Heo 8 10403 2016 10.1021/acsami.5b12819 Water-mediated photochemical treatments for low-temperature passivation of metal-oxide thin-film transistors
Thin Solid Films Kikuchi 518 3017 2010 10.1016/j.tsf.2009.10.132 Device characteristics improvement of a-In-Ga-Zn-O TFTs by low-temperature annealing
Appl. Phys. Lett. Park 92 2008 10.1063/1.2838380 Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
J. Mater. Chem. C Sabri 3 7499 2015 10.1039/C5TC01457C Hydroxyl radical-assisted decomposition and oxidation in solution-processed indium oxide thin-film transistors
Nucl. Instrum. Methods Phys. Res., Sect. B Parks 134 46 1998 10.1016/S0168-583X(98)80032-3 Non-kinetic damage on insulating materials by highly charged ion bombardment
J. Vac. Sci. Technol. B Triska 28 C511 2010 Bias stress stability of zinc-thin-oxide thin-film transistors with Al2O3 gate dielectrics
Appl. Phys. Lett. Jeong 93 2008 10.1063/1.2990657 Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
Appl. Phys. Lett. Jo 105 2014 10.1063/1.4902867 Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation
Appl. Phys. Lett. Ji 98 2011 10.1063/1.3564882 Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.