[논문]Understanding and Optimization of Pulsed SET Operation in HfOx-Based RRAM Devices for Neuromorphic Computing Applications

Padovani, Andrea; Woo, Jiyong; Hwang, Hyunsang; Larcher, Luca

doi:10.1109/LED.2018.2821707

[해외논문] Understanding and Optimization of Pulsed SET Operation in HfOx-Based RRAM Devices for Neuromorphic Computing Applications 원문보기

IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.39 no.5, 2018년, pp.672 - 675

Padovani, Andrea (MDLab s.r.l., Reggio Emilia, Italy) , Woo, Jiyong (Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea) , Hwang, Hyunsang (Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea) , Larcher, Luca (Dipartimento di Scienze e Metodi dell’Ingegneria, Universita di Modena e Reggio Emilia, Reggio Emilia, Italy)

Abstract ▼ AI-Helper

We use experiments and device simulations to investigate pulsed SET operation of HfO2-based RRAM devices for their possible use as electronic synapses. The application of a train of identical pulses only allows for an abrupt change of the device current, which is not suitable for synaptic devices. By using simulations, we link the microscopic properties and changes of the conductive filament during the pulsed operation to the measured conductance and its dependence on pulse voltage, width, and number. The results allow us to derive guidelines that we use to design optimized SET pulses (or pulse trains) allowing extending the conventional binary operation of HfO2-based RRAMs to the multi-level cell operation required by electronic synapses.

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[해외논문] Understanding and Optimization of Pulsed SET Operation in HfOx-Based RRAM Devices for Neuromorphic Computing Applications 원문보기

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[해외논문] Understanding and Optimization of Pulsed SET Operation in HfOx-Based RRAM Devices for Neuromorphic Computing Applications 원문보기

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