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NTIS 바로가기Solid-state electronics, v.151, 2019년, pp.6 - 10
Han, Joon-Kyu (Corresponding author.) , Park, Jun-Young , Choi, Yang-Kyu
Abstract A strategy of reducing the power consumption to cure gate dielectric damage by electrothermal annealing (ETA) is proposed. A tri-gate FinFET was fabricated to demonstrate the damage curing by the ETA. Localized Joule heat induced by high current flowing through dual gate electrodes success...
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