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IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.32 no.3, 2011년, pp.279 - 281
Hakim, M M A (Nano Res. Group, Univ. of Southampton, Southampton, UK) , Abuelgasim, A (Nano Res. Group, Univ. of Southampton, Southampton, UK) , Tan, L (Dept. of Electr. Eng. &) , de Groot, C H (Electron., Univ. of Liverpool, Liverpool, UK) , Redman-White, W (Nano Res. Group, Univ. of Southampton, Southampton, UK) , Hall, S (Nano Res. Group, Univ. of Southampton, Southampton, UK) , Ashburn, P (Dept. of Electr. Eng. &)
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This letter reports a study on the effect of a hydrogen anneal after silicon pillar etch of surround-gate vertical MOSFETs intended for RF applications. A hydrogen anneal at 800°C is shown to give a 30% improvement in the drive current of 120-nm n-channel transistors compared with transistors...
Mori, K., Duong, AnhKim, Richardson, W.F.. Sub-100-nm vertical MOSFET with threshold voltage adjustment. IEEE transactions on electron devices, vol.49, no.1, 61-66.
10.1109/IEDM.1999.823850
Cester, A., Gerardin, S., Tazzoli, A., Meneghesso, G.. Electrostatic discharge effects in ultrathin gate oxide MOSFETs. IEEE transactions on device and materials reliability : a publication of the IEEE Electron Devices Society and the IEEE Reliability Society, vol.6, no.1, 87-94.
Solid State Electron improved sub-threshold slope in short channel vertical mosfets using a filox oxidation hakim 2009 10.1016/j.sse.2009.02.016 53 753
Ricco, B., Olivo, P., Nguyen, T.N., Kuan, T.-S., Ferriani, G.. Oxide-thickness determination in thin-insulator MOS structures. IEEE transactions on electron devices, vol.35, no.4, 432-438.
Hakim, M M A, Tan, L, Abuelgasim, A, Mallik, K, Connor, S, Bousquet, A, de Groot, C H, Redman-White, W, Hall, S, Ashburn, P. Self-Aligned Silicidation of Surround Gate Vertical MOSFETs for Low Cost RF Applications. IEEE transactions on electron devices, vol.57, no.12, 3318-3326.
Chen, I.-C., Teng, C.W., Coleman, D.J., Nishimura, A.. Interface trap-enhanced gate-induced leakage current in MOSFET. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.10, no.5, 216-218.
Jyh-Chyurn Guo, Ming-Chien Chang, Chih-Yuan Lu, Hsu, C.C.-H., Chung, S.S.-S.. Transconductance enhancement due to back bias for submicron NMOSFET. IEEE transactions on electron devices, vol.42, no.2, 288-294.
Xiong, W., Gebara, G., Zaman, J., Gostkowski, M., Nguyen, B., Smith, G., Lewis, D., Cleavelin, C.R., Wise, R., Yu, S., Pas, M., King, T.-J., Colinge, J.P.. Improvement of FinFET Electrical Characteristics by Hydrogen Annealing. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.25, no.8, 541-543.
Gili, E., Kunz, V.D., de Groot, C.H., Uchino, T., Ashburn, P., Donaghy, D.C., Hall, S., Wang, Y., Hemment, P.L.F.. Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance. Solid-state electronics, vol.48, no.4, 511-519.
Sai-Halasz, G.A., Wordeman, M.R., Kern, D.P., Rishton, S., Ganin, E.. High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.9, no.9, 464-466.
Schulz, T., Rosner, W., Risch, L., Korbel, A., Langmann, U.. Short-channel vertical sidewall MOSFETs. IEEE transactions on electron devices, vol.48, no.8, 1783-1788.
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