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NTIS 바로가기Electron Devices Meeting, 2006. IEDM `06. International, 2006 Dec., 2006년, pp.1 - 4
Ranjan, R (Microelectronics Centre, School of EEE, NTU, Nanyang Avenue, Singapore 639798) , Pey, Kl (Institute of Microelectronics, 11 Science Park Road, Singapore 117685.) , Tung, Ch (Microelectronics Centre, School of EEE, NTU, Nanyang Avenue, Singapore 639798) , Ang, Ds (School of EEE, NTU, Singapore, Tel: 65-67906371, Fax: 65-68989624, email: eklpey@ntu.edu.sg) , Tang, Lj (Institute of Microelectronics, 11 Science Park Road, Singapore 117685.) , Kauerauf, T (Microelectronics Centre, School of EEE, NTU, Nanyang Avenue, Singapore 639798.) , Degraeve, R (Institute of Microelectronics, 11 Science Park Road, Singapore 117685.) , Groeseneken, G (IMEC, Kapeldreef, 75, B-3001 Leuven, Belgium) , De Gendt, S (KU Leuven, Belgium.) , Bera, Lk (IMEC, Kapeldreef, 75, B-3001 Leuven, Belgium.)
HfO2 high-�/TaN/TiN gate stacks n/p-MOSFETs have been studied. Ultrafast progressive breakdown (PBD) is polarity dependent and is found only in the case of substrate injection in metal gate n/p-MOSFETs. PBD transient of metal gate p-MOSFET is much slower than n-MOSFET in inversion mode stress...
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