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NTIS 바로가기SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE, 2014 Oct, 2014년, pp.1 - 2
Shin, M. (IMEP-LAHC, Grenoble INP, Minatec, BP 257, 38016, France) , Shi, M. (IMEP-LAHC, Grenoble INP, Minatec, BP 257, 38016, France) , Mouis, M. (IMEP-LAHC, Grenoble INP, Minatec, BP 257, 38016, France) , Cros, A. (STMicroelectronics, 850, rue J. Monnet, BP 16, 38921 Crolles, France) , Josse, E. (STMicroelectronics, 850, rue J. Monnet, BP 16, 38921 Crolles, France) , Kim, G.T. (School of Electrical Engineering, Korea University, 136-701, Seoul, South Korea) , Ghibaudo, G. (IMEP-LAHC, Grenoble INP, Minatec, BP 257, 38016, France)
In this paper, we studied hole transport in highly scaled (down to 14nm-node) FDSOI devices, from 77K to 300K in the coupling condition. We studied mobility enhancement by Ge% and back biasing. Then, mobility degradation in short channel devices was intensively analysed and additional scattering mec...
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