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Solid-state electronics, v.111, 2015년, pp.100 - 103
Theodorou, C.G. , Ioannidis, E.G. , Haendler, S. , Dimitriadis, C.A. , Ghibaudo, G.
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The impact of the dynamic variability due to low frequency and RTN fluctuations on single MOSFET operation from 14nm FD-SOI technology is investigated for the first time. It is shown that the dynamic variability is enhanced as the rise time and the device area are reduced. Different simulation appro...
IEEE J Solid-State Circ Pelgrom 24 5 1433 1989 10.1109/JSSC.1989.572629 Matching properties of MOS transistors
IEEE Trans Electron Dev Asenov 45 12 2505 1998 10.1109/16.735728 Random dopant induced threshold voltage lowering and fluctuations in sub-0.1μm MOSFET’s: a 3-D “atomistic” simulation study
IEEE Trans Electron Dev Hiramoto 58 8 2249 2011 10.1109/TED.2011.2138142 Direct measurement of correlation between SRAM noise margin and individual cell transistor variability by using device matrix array
Microelectron Reliab Ghibaudo 42 573 2002 10.1016/S0026-2714(02)00025-2 Electrical noise and RTS fluctuations in advanced CMOS devices
10.1109/VLSIT.2010.5556222 Takeuchi K, Nagumo T, Takeda K, Asayama S, Yokogawa S, Imai K, Hayashi Y. Direct observation of RTN-induced SRAM failure by accelerated testing and its application to product reliability assessment. In: IEEE proceedings of symposium on VLSI technology; 2010. p. 189.
Solid State Electron Ioannidis 151 2013 10.1016/j.sse.2012.12.001 Characterization and modeling of low frequency noise in CMOS inverters
10.1109/ESSDERC.2014.6948798 Ioannidis EG, Haendler S, Theodorou CG, Planes N, Dimitriadis CA, Ghibaudo G. Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs. In: ESSDERC; 2014.
10.1149/06605.0037ecst Weber O, et al. 14-nm FDSOI platform technology for high-speed and energy-efficient applications. VLSI; 2014.
Electron Lett Ioannidis 49 9 1214 2013 10.1049/el.2013.1343 Impact of dynamic variability on the operation of CMOS inverter
10.1109/ISCAS.1992.230079 Bolcato P, Poujois R. A new approach for noise simulation in transient analysis. In: Proceedings of IEEE ISCS, May 1992. p. 887-90.
IEEE Trans Comput-Aided Des Integr Circ Syst Sung 22 8 1097 2003 10.1109/TCAD.2003.814956 A transient noise model for frequency-dependent noise sources
IEEE Electron Device Lett Ioannidis 36 5 2015 10.1109/LED.2015.2411289 Impact of source-drain series resistance on drain current mismatch in advanced fully depleted SOI n-MOSFETs
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