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NTIS 바로가기Electron Devices Meeting (IEDM), 2016 IEEE International, 2016 Dec, 2016년, pp.5.8.1 - 5.8.4
Takenaka, M. (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan) , Ozawa, Y. (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan) , Han, J. (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan) , Takagi, S. (Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan)
We have evaluated interfacial properties of exfoliated MoS2 MOS interfaces with HfO2, Al2O3, and SiO2 by C-V measurements of thick-body MoS2 MOS capacitors. The Terman method have revealed that most of the MoS2 MOS interfaces exhibit a Dit peak of approximately 1×1013 cm−2eV−1 a...
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