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NTIS 바로가기SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2019 IEEE, 2019 Oct 14, 2019년, pp.1 - 3
Ivaniukovich, Aliaksei (Samsung Electronics, Hwaseong-si, South Korea) , Kim, KwanYoung (Samsung Electronics, Hwaseong-si, South Korea) , Maeng, Wooyeol (Samsung Electronics, Yongin-si, South Korea) , Shin, HuiChul (Samsung Electronics, Yongin-si, South Korea) , Park, KangWook (Samsung Electronics, Yongin-si, South Korea) , Kim, Yoon-Suk (Samsung Electronics, Hwaseong-si, South Korea) , Kwon, UiHui (Samsung Electronics, Hwaseong-si, South Korea) , Kim, Dae Sin (Samsung Electronics, Hwaseong-si, South Korea)
We propose to utilize Buried Oxide (BOX) and Silicon-On-Insulator (SOI) layers as thick oxide and contact field plate on drain drift region of EDMOS. A thick BOX can reduce electric field to minimize hot carrier injection and gate-to-drain overlap capacitance for high cut-off frequency and better re...
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