최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기VLSI Technology, 2021 Symposium on, 2021 June 13, 2021년, pp.1 - 2
Mertens, H. (imec, Leuven, Belgium) , Ritzenthaler, R. (imec, Leuven, Belgium) , Oniki, Y. (imec, Leuven, Belgium) , Briggs, B. (imec, Leuven, Belgium) , Chan, B.T. (imec, Leuven, Belgium) , Hikavyy, A. (imec, Leuven, Belgium) , Hopf, T. (imec, Leuven, Belgium) , Mannaert, G. (imec, Leuven, Belgium) , Tao, Z. (imec, Leuven, Belgium) , Sebaai, F. (imec, Leuven, Belgium) , Peter, A. (imec, Leuven, Belgium) , Vandersmissen, K. (imec, Leuven, Belgium) , Dupuy, E. (imec, Leuven, Belgium) , Rosseel, E. (imec, Leuven, Belgium) , Batuk, D. (imec, Leuven, Belgium) , Geypen, J. (imec, Leuven, Belgium) , Martinez, G. T. (imec, Leuven, Belgium) , Abigail, D. (imec, Leuven, Belgium) , Grieten, E. (imec, Leuven, Belgium) , Dehave, K. (imec, Leuven, Belgium) , Mitard, J. , Subramanian, S. , Ragnarsson, L.-Å. , Weckx, P. , Jang, D. , Chehab, B. , Hellings, G. , Ryckaert, J. , Litta, E. Dentoni , Horiguchi, N.
We report on forksheet N- and PFETs co-integrated with gate-all-around nanosheet FETs. The forksheet short-channel control is on par with nanosheets down to 22nm gate length (SSSAT=66-68mV/dec). Forksheet ION and IOFF characteristics are improved by post-channel-release wet clean optimization, attri...
※ AI-Helper는 부적절한 답변을 할 수 있습니다.