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NTIS 바로가기Engineering and Telecommunication (En&T), 2021 International Conference, 2021 Nov 24, 2021년, pp.1 - 6
Saurabh, Raman (Moscow Institute of Physics and Technology, Moscow, Russia) , Tripathi, Pramod Narayan (Moscow Institute of Physics and Technology, Moscow, Russia) , Bhasme, Sarang Balasaheb (Moscow Institute of Physics and Technology, Moscow, Russia) , Nazarov, Alexey (Federal Research Center Computer Science and Control of Russian Academy of Sciences, Moscow, Russia)
We present design and simulation of a single gate Fin-FET structure on the SOI substrate using Silvaco TCAD. A 45 nm channel length Fin-FET structure is compared with conventional MOSFET structure having same channel length. Different structural and process parameters such as length, width, height, ...
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