IPC분류정보
국가/구분 |
United States(US) Patent
공개
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0977160
(2001-10-11)
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공개번호 |
US-0023832
(2002-02-28)
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발명자
/ 주소 |
|
대리인 / 주소 |
KONRAD RAYNES VICTOR & MANN, LLP
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인용정보 |
피인용 횟수 :
0 인용 특허 :
0 |
초록
▼
A method and apparatus for depositing a layer of a material which contains a metal on a workpiece surface, in an installation including a deposition chamber; a workpiece support providing a workpiece support surface within the chamber; a coil within the chamber, the coil containing the metal that wi
A method and apparatus for depositing a layer of a material which contains a metal on a workpiece surface, in an installation including a deposition chamber; a workpiece support providing a workpiece support surface within the chamber; a coil within the chamber, the coil containing the metal that will be contained in the layer to be deposited; and an RF power supply connected to deliver RF power to the coil in order to generate a plasma within the chamber, a DC self bias potential being induced in the coil when only RF power is delivered to the coil. A DC bias potential which is different in magnitude from the DC self bias potential is applied to the coil from a DC voltage source. In order to place a deposition chamber of a physical vapor deposition apparatus in which metal or other material is sputtered from a target and a coil in condition to effect deposition of a layer consisting of the sputtered material on a substrate subsequent to deposition, in the apparatus, of a layer containing a reaction compound of the sputtered material, the chamber is filled with a non-reactive gas and a voltage is applied to sputter from the target and coil any reaction compound which has coated the target and coil during deposition of the layer containing the reaction compound of the sputtered metal.
대표청구항
▼
1. Apparatus for depositing a layer of a metal-containing material on a workpiece surface, said apparatus comprising:a deposition chamber; a workpiece support providing a workpiece support surface within said chamber; a coil within said chamber, said coil containing the metal of the metalcontaining
1. Apparatus for depositing a layer of a metal-containing material on a workpiece surface, said apparatus comprising:a deposition chamber; a workpiece support providing a workpiece support surface within said chamber; a coil within said chamber, said coil containing the metal of the metalcontaining material to be deposited, an RF power supply connected to deliver RF power to said coil in order to generate a plasma within said chamber, a DC self bias potential being induced in said coil when only RF power is delivered to said coil; and a DC voltage source connected to apply to said coil a DC bias potential which is different in magnitude from the DC self bias potential. 2. The apparatus according to claim 1 wherein metal is sputtered from said coil when RF power is delivered to said coil, the plasma is generated in said chamber and the additional DC bias potential is applied to said coil. 3. The apparatus according to claim 2 wherein the additional DC potential enhances sputtering of metal from said coil. 4. The apparatus according to claim 3 wherein said coil is a single turn coil. 5. The apparatus according to claim 4 wherein: the workpiece support surface has a central region and a peripheral region surrounding the central region;said coil is dimensioned and positioned so that metal sputtered therefrom is directed primarily to the peripheral region of the workpiece support surface; and said apparatus further comprises a sputtering target disposed in said deposition chamber so that metal is sputtered from said target when the plasma is generated in said chamber, and metal sputtered from said target is directed to the central region of the workpiece support surface. 6. The apparatus according to claim 3 wherein: the workpiece support surface has a central region and a peripheral region surrounding the central region;said coil is dimensioned and positioned so that metal sputtered therefrom is directed primarily to the peripheral region of the workpiece support surface; and said apparatus further comprises a sputtering target disposed in said deposition chamber so that metal is sputtered from said target when the plasma is generated in said chamber, and metal sputtered from said target is directed to the central region of the workpiece support surface. 7. The apparatus according to claim 3 wherein said coil is the sole source of sputtered metal in said chamber. 8. The apparatus according to claim 7 wherein said coil comprises a plurality of turns. 9. The apparatus according to claim 8 wherein said turns have respectively different diameters. 10. The apparatus according to claim 9 wherein said coil is a planar coil whose turns lie in a plane substantially parallel to the workpiece support surface. 11. The apparatus according to claim 9 wherein said coil is a domeshaped coil. 12. The apparatus according to claim 1 further comprising an RF power blocking filter connected between said RF power supply and said DC voltage source. 13. The apparatus according to claim 11 wherein the DC bias potential applied by said DC volt age source is greater in magnitude than the DC self bias potential. 14. Apparatus for depositing a layer of a metal-containing material on a workpiece surface, said apparatus comprising:a deposition chamber; a workpiece support providing a workpiece support surface within said chamber; a coil within said chamber, said coil containing the metal of the metalcontaining material to be deposited; means for delivering RF power to said coil in order to generate a plasma within said chamber while a DC self bias potential is induced in said coil when only RF power is delivered to said coil; and means for applying a DC bias potential to said coil, the DC bias potential being different in magnitude from the DC self bias potential. 15. The apparatus according to claim 14 wherein the DC bias potential applied by said means is greater in magnitude than the DC self potential. 16. Apparatus for depositing a layer of a metal-containing material on a workpiece surface, said apparatus comprising:a deposition chamber; a workpiece support providing a workpiece support surface for supporting a workpiece within said chamber; a coil within said chamber, said coil containing the metal of the metalcontaining material to be deposited; means for delivering RF power to said coil in order to generate a plasma within said chamber while a DC self bias potential is induced in said coil when only RF power is delivered to said coil, for sputtering material from said coil and directing the sputtered material onto the workpiece; means for applying a DC bias potential to said coil, the DC bias potential being different in magnitude from the DC self bias potential; wherein said coil is the sole source of sputtered material within said chamber. 17. The apparatus according to claim 16 wherein said coil comprises a plurality of turns. 18. The apparatus according to claim 17 wherein said turns have respectively different diameters. 19. The apparatus according to claim 18 wherein said coil is a planar coil whose turns lie in a plane substantially parallel to the workpiece support surface. 20. The apparatus according to claim 18 wherein said coil is a dome-shaped coil. 21. Apparatus for depositing a layer of a metal-containing material on a workpiece surface, said apparatus comprising:a deposition chamber; a workpiece support providing a workpiece support surface for supporting a workpiece within said chamber; a coil within said chamber, said coil containing the metal of the metal-containing material to be deposited; and means for delivering RF power to said coil in order to generate a plasma within said chamber while a DC self bias potential is induced in said coil when only RF power is delivered to said coil, for sputtering material from said coil and directing the sputtered material onto the workpiece, wherein said coil is shaped and positioned so that material sputtered from said coil is substantially uniformly deposited on said workpiece surface and wherein said coil is the sole source of sputtered material within said chamber. 22. The apparatus accordi ng to claim 21 wherein said coil comprises a plurality of turns. 23. The apparatus according to claim 22 wherein said turns have respectively different diameters. 24. The apparatus according to claim 23 wherein said coil is a planar coil whose turns lie in a plane substantially parallel to the workpiece support surface. 25. The apparatus according to claim 23 wherein said coil is a domeshaped coil. 26. The apparatus according to claim 21 wherein said coil is a spiral-shaped coil. 27. A method of depositing a layer of a metal-containing material on a workpiece surface in a deposition chamber, said method comprising:disposing a workpiece having a surface in the chamber; disposing a coil within the chamber, the coil containing the metal of the metal-containing material to be deposited; generating a plasma in the chamber by delivering RF power to the coil so that the metal is sputtered from the coil, whereby a DC self bias potential is induced in the coil when only RF power is delivered thereto; creating a DC bias potential in the coil, which potential is different in magnitude from the DC self bias potential; and directing metal sputtered from the coil to the workpiece surface to form the layer. 28. The method according to claim 27 wherein the plasma and the DC bias potential cause the metal to be sputtered from the coil at a rate which varies directly with the magnitude of the DC bias potential, and further comprising adjusting the magnitude of the DC bias potential to sputter metal from said coil at a selected rate. 29. The method according to claim 27 wherein:the workpiece surface has a central region and a peripheral region surrounding the central region; said step of directing metal sputtered from the coil is carried out to direct sputtered metal primarily to the peripheral region; and said method further comprises sputtering metal from a target within the chamber and directing metal sputtered from the target primarily to the central region. 30. The method according to claim 29 wherein said step of adjusting the magnitude of the DC bias potential is performed to minimize differences between the thickness of the layer in the peripheral region and the thickness of the layer in the central region. 31. The method according to claim 27 wherein all sputtered metal directed to the workpiece surface is metal which has been sputtered from the coil. 32. The method according to claim 31 wherein the coil is configured to cause a layer of uniform thickness to be deposited on the workpiece surface. 33. The method according to claim 27 wherein the DC bias potential created in the coil is greater in magnitude than the DC self bias potential. 34. A method of depositing a layer of a metal-containing material on a workpiece surface in a deposition chamber, said method comprising:disposing a workpiece having a surface in the chamber, disposing a coil within the chamber, the coil containing the metal of the metal-containing material; generating a plasma in the chamber by delivering RF power to the coil so that the metal is sputtered from the coil, whereby a DC self bias potential is induced in the coil when only RF power is delivered thereto; creating a DC bias potential in the coil, which potential is different in magnitude from the DC self bias potential; and directing metal sputtered from the coil to the workpiece surface to form the layer, wherein all sputtered metal directed to the workpiece surface is metal which has been sputtered from the coil. 35. The method according to claim 34 wherein the coil comprises a plurality of turns. 36. The method according to claim 35 wherein the coil turns have respectively different diameters. 37. The method according to claim 36 wherein the coil is a planar coil whose turns lie in a plane substantially parallel to the workpiece support surface. 38. The method according to claim 36 wherein the coil is a domeshaped coil. 39. The method according to claim 36 wherein the coil is a spiralshaped coil. 40. A method of depositing a layer of a metal-containing material on a workpiece surface in a deposition chamber, said method comprising:disposing a workpiece having a surface in the chamber, disposing a coil within the chamber, the coil containing the metal of the metal-containing material; generating a plasma in the chamber by delivering RF power to the coil so that the metal is sputtered from the coil, whereby a DC self bias potential is induced in the coil when only RF power is delivered thereto; and directing metal sputtered from the coil to the workpiece surface to form the layer, wherein said coil is shaped and positioned so that material sputtered from said coil is substantially uniformly deposited on said workpiece surface and wherein all sputtered metal directed to the workpiece surface is metal which has been sputtered from said coil. 41. The method according to claim 40 wherein the coil comprises a plurality of turns. 42. The method according to claim 41 wherein the coil turns have respectively different diameters. 43. A method of depositing a layer on a substrate, comprising:sputtering a sputter material source which includes a coil while biasing said coil at a first biasing level to provide a first sputtering rate of said coil to deposit a layer of a reaction compound on a substrate in a chamber, said reaction compound comprising a material sputtered from said sputter material source and a second constituent other than said sputter source material; sputtering said sputter material source a second time while biasing said coil at a second biasing level, higher than said first biasing level, to provide a second sputtering rate to remove a coating of reaction compound from said sputter material source; and after said reaction compound coating removal sputtering, sputtering said sputter material source a third time to deposit a layer of sputter source material substantially free of said reaction compound on a substrate in said chamber. 44. The method of claim 43 wherein said second sputtering rate is higher than said first sputtering rate so that said reaction compound coating removal sputtering is at a higher rate than said sputter source material layer sputtering. 45. The method of claim 44 wherein said sputter material source further includes a target separate from said coil. 46. The method of claim 45 wherein said sputter source material layer sputtering comprises biasing said target at a first level to provide a first sputtering rate of said target, and said reaction compound coating removal sputtering comprises biasing said target at a second level, higher than said first biasing level, to provide a second sputtering rate, higher than said first sputtering rate so that said reaction compound coating removal sputtering is at a higher rate than said sputter source material layer sputtering. 47. The method of claim 44 wherein said biasing of said coil at a second biasing level includes coupling a DC voltage source to said coil sputter material source. 48. The method of claim 43 further comprising removing said substrate having said reaction compound layer prior to said reaction compound coating removal sputtering and covering a substrate support during said reaction compound coating removal sputtering. 49. A method for placing a plasma vapor deposition apparatus in condition to effect deposition of a layer consisting of a metal on a substrate subsequent to deposition, in the apparatus, of a layer containing a reaction compound of the metal, the apparatus including a deposition chamber containing at least one component including a coil from which metal is sputtered during deposition and which is coated with the metal reaction compound during deposition of the metal reaction compound, the metal reaction compound being formed by reacting metal sputtered from the component with a reactive gas within the chamber, a first DC bias potential being inherently induced in the coil during deposition of the metal reaction compound, said method comprising removing a metal reaction compound coating which has formed on at least one component by the steps of:removing the reactive gas from the chamber; introducing a non-reactive gas into the enclosure; and sputtering substantially all metal reaction compound from the component in an atmosphere containing substantially only the non-reactive gas and metal reaction compound material being sputtered from the component while applying a DC voltage to the coil in order to place the coil at a second DC bias potential having a magnitude greater than the first DC bias potential. 50. The method according to claim 49 wherein the at least one component also includes a sputtering target separate from said coil. 51. The method according to claim 50 wherein the metal reaction compound is one of a nitride and an oxide. 52. The method according to claim 51 wherein said coil is mounted within the chamber and connected for receiving RF power to generate an RF electromagnetic field which interacts with gas within the chamber to produce a plasma, the plasma containing gas ions which ionize material sputtered from at least one component. 53. The method according to claim 52 wherein sputtering of the metal from the component during deposition of the metal reaction compound is effected while supplying a first RF power level to the coil, and wherein said step of sputtering substantially all metal reaction compound from the component comprises supplying a second RF power level which is higher than the first RF power level. 54. The method according to claim 49 wherein said coil is mounted within the chamber and connected for receiving RF power to generate an RF electromagnetic field which interacts with gas within the chamber to produce a plasma, the plasma containing gas ions which ionize material sputtered from at least one component. 55. The method according to claim 54 wherein sputtering of the metal from the component during deposition of the metal reaction compound is effected while supplying a first RF power level to the coil, and wherein said step of sputtering substantially all metal reaction compound from the component comprises supplying a second RF power level which is higher than the first RF power level. 56. The method according to claim 49 further comprising preventing deposition of any material on a substrate during said step of sputtering substantially all metal reaction compound from the component. 57. The method according to claim 56 wherein said step of preventing deposition of any material on a substrate is carried out by having no substrate in the enclosure during said step of sputtering substantially all metal reaction compound from the component. 58. The method according to claim 49 wherein the apparatus further includes a substrate support within the chamber, the substrate support having a support surface on which a substrate rests during deposition of a layer, and wherein said method further comprises covering the support surface during said step of sputtering substantially all metal reaction compound from the component. 59. An apparatus for depositing a layer on a substrate, comprising:a chamber having a sputter material source which includes an RF coil, a biasing power supply for applying a DC biasing voltage to said RF coil, a support for a substrate positioned to receive material sputtered from said sputter material source onto said substrate, and at least one port for admitting a reactive material other than said sputter source material and for expelling said reactive material; and a programmable chamber controller, said controller being programmed to cause said chamber to 1) admit reactive material; 2) sputter said sputter material source to deposit a layer of a reaction compound on said substrate, said reaction compound comprising said source material sputtered from said sputter material source and said reactive material; 3) expel reactive material from said chamber; 4) sputter said sputter material source a second time to remove a coating of reaction compound from said sputter material source; and 5) after said reaction compound removal sputtering, sputter said sputter material source a third time to deposit a layer of sputter source material substantially free of said reaction comp ound on a substrate in said chamber, wherein said controller is further programmed to control said biasing power supply to 1) bias said coil at a first level to provide a first sputtering rate of said sputter material source during said sputter source material layer; and 2) bias said coil at a second level, higher than said first biasing level, to provide a second sputtering rate during said reaction compound coating removal sputtering, higher than said first sputtering rate. 60. The apparatus of claim 59 wherein said reaction compound coating removal sputtering is at a higher rate than said sputter source material layer sputtering. 61. The apparatus of claim 59 wherein said sputter material source further includes a target. 62. The apparatus of claim 59 wherein said biasing power supply is a DC voltage source coupled to said coil. 63. Apparatus for selectively depositing, on a surface of a substrate, either a layer consisting essentially of a metal, in an atmosphere consisting essentially of non-reactive gas, or a layer of a reaction compound of the metal, in an atmosphere containing a reactive gas, said apparatus comprising:a closed deposition chamber for containing the substrate and the atmosphere; a coil disposed in said chamber; and power supply means connected to said coil for applying to said coil a voltage for creating, within said chamber, an inductively coupled plasma which acts to sputter metal from a metal body within said deposition chamber and to ionize the sputtered metal for deposition on the substrate surface, wherein said power supply means are controllable for applying a voltage having a first magnitude to said coil during deposition of a layer and for applying a voltage having a second magnitude, larger than the first magnitude, after deposition of a layer of a reaction compound of the metal and before deposition of a layer consisting essentially of the metal, and while the atmosphere within said chamber consists essentially of the non-reactive gas, and further wherein said power supply means comprise a DC power supply for selectively applying a DC bias to said coil to create at least a portion of the voltage having the second magnitude. 64. The apparatus according to claim 63 wherein said power supply means further comprise an RF power source for controllably supplying either a first RF power level to said coil, to create the voltage having the first magnitude, or a second RF power level which is higher than the first RF power level to create the voltage having the second magnitude. 65. The apparatus according to claim 63 wherein said power supply means further comprise an RF power source for supplying RF power to said coil to create the voltage having the first magnitude. 66. The apparatus according to claim 63 further comprising:a substrate support within said chamber, said substrate support having a support surface on which a substrate rests during deposition of a layer; and a cover plate for covering the support surface when the voltage having the second magnitude is being applied to said coil.
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