Method of etching for multi-layered structure of semiconductors in groups III-V and method for manufacturing vertical cavity surface emitting laser device
원문보기
Provided are an etching method for a multi-layered structure of semiconductors in groups III-V and a method of manufacturing a VCSEL using the etching method. According to the etching method, a stacked structure including a first semiconductor layer and a second semiconductor layer is exposed to a p
Provided are an etching method for a multi-layered structure of semiconductors in groups III-V and a method of manufacturing a VCSEL using the etching method. According to the etching method, a stacked structure including a first semiconductor layer and a second semiconductor layer is exposed to a plasma of a mixture consisting of Cl2, Ar, CH4, and H2 to etch the stacked structure, so that a mirror layer of the VCSEL is formed. The first semiconductor layer is formed of a semiconductor in groups III-V and the second semiconductor layer is formed of a semiconductor in groups III-V, other than the semiconductor of the first semiconductor layer. At least part of a lower mirror layer, a lower electrode layer, an optical gain layer, an upper electrode layer, and an upper mirror layer is etched using one time of an etching process, so that a clean and smooth etched surface is obtained.
대표청구항▼
What is claimed is: 1. An etching method for a multi-layered structure of semiconductors in groups III-V, the method comprising: performing etching by exposing a stacked structure including a first semiconductor layer formed of a semiconductor in groups III-V and a second semiconductor layer formed
What is claimed is: 1. An etching method for a multi-layered structure of semiconductors in groups III-V, the method comprising: performing etching by exposing a stacked structure including a first semiconductor layer formed of a semiconductor in groups III-V and a second semiconductor layer formed of a semiconductor in groups III-V, other than the semiconductor of the first semiconductor layer, to a plasma of a mixture consisting of Cl2, Ar, CH4, and H2. 2. The method of claim 1, wherein each of the first semiconductor layer and the second semiconductor layer is formed of one material selected from the group consisting of GaAs, AlAs, AlGaAs, InAlAs, InAlGaAs, InGaAs, InGaAsP, InAlGaP, InGaP, and InP. 3. The method of claim 1, wherein the mixture consists of Cl2 of about 1-99 volume %, Ar of about 1-99 volume %, CH4 of about 1-99 volume %, and H2 of about 1-99 volume %, based on the total volume of the mixture. 4. The method of claim 3, wherein a volume ratio of Cl2 to Ar in the mixture is 1:1, and a volume ratio of CH4 to H2 in the mixture is 5:2. 5. The method of claim 4, wherein the total volume of Cl2 and Ar is the same as that of CH4 and H2. 6. The method of claim 1, wherein the etching is performed at a pressure range of 1-100 mTorr. 7. The method of claim 1, wherein the etching is performed at a plasma power density range of 0.1-5 Watt/cm2. 8. The method of claim 1, wherein the etching is performed at a temperature range of 0-150째 C. 9. A method of manufacturing a VCSEL, the method comprising: forming a stacked structure including a plurality of semiconductor layers formed of different materials in groups III-V on a substrate; forming a mask pattern on the stacked structure to expose part of the stacked structure; and exposing the exposed part of the stacked structure to a plasma of a mixture consisting of Cl2, Ar, CH4, and H2 using the mask pattern as an etch mask to etch the exposed part of the stacked structure to a predetermined thickness. 10. The method of claim 9, wherein each of the plurality of semiconductor layers is formed of one material selected from the group consisting of GaAs, AlAs, AlGaAs, InAlAs, InAlGaAs, InGaAs, InGaAsP, InAlGaP, InGaP, and InP. 11. The method of claim 9, wherein the plurality of semiconductor layers comprise a lower mirror layer, a lower electrode layer, an optical gain layer, an upper electrode layer, and an upper mirror layer sequentially formed on the substrate, and the etching etches at least part of the lower mirror layer, the lower electrode layer, the optical gain layer, the upper electrode layer, and the upper mirror layer. 12. The method of claim 11, wherein each of the lower mirror layer and the upper mirror layer is formed of a stacked structure in which an InP layer and an InAlGaAs layer are alternately stacked a predetermined number of times. 13. The method of claim 11, wherein each of the lower electrode layer and the upper electrode layer is formed of InP. 14. The method of claim 11, wherein the optical gain layer is formed of InP/InAlGaAs.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.