IPC분류정보
국가/구분 |
United States(US) Patent
공개
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0042377
(2008-03-05)
|
공개번호 |
US-0230929
(2008-09-25)
|
우선권정보 |
KR-10-2007-0027224(2007-03-20) |
발명자
/ 주소 |
- Shin,Jang ho
- Park,Chan hoon
- Lee,Jung Hyeon
- Lee,Suk joo
- Kang,Hyun tae
- Cho,Jeong hee
- Song,Young hoon
|
출원인 / 주소 |
- Samsung Electronics Co., Ltd.
|
대리인 / 주소 |
MYERS BIGEL SIBLEY & SAJOVEC
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
0 |
초록
▼
Provided are an overlay mark of a semiconductor device and a semiconductor device including the overlay mark. The overlay mark includes: reference marks formed in rectangular shapes comprising sides in which fine patterns are formed; and comparison marks formed as rectangular shapes which are smalle
Provided are an overlay mark of a semiconductor device and a semiconductor device including the overlay mark. The overlay mark includes: reference marks formed in rectangular shapes comprising sides in which fine patterns are formed; and comparison marks formed as rectangular shapes which are smaller than the rectangular shapes of the reference marks and formed of fine patterns, wherein the number of comparison marks is equal to the number of reference marks, wherein the reference marks and the comparison marks are formed on different thin films formed on a semiconductor substrate to be used to inspect alignment states of the different thin films, and the overlay mark reflects an effect of aberration of patterns of memory cells through the fine patterns during a calculation of MR (mis-registration).
대표청구항
▼
What is claimed is: 1. An overlay mark of a semiconductor device comprising: at least one reference mark formed in a rectangular shape and comprising sides in which fine patterns are formed; and at least one comparison mark formed in a rectangular shape smaller than the rectangular shape of the at
What is claimed is: 1. An overlay mark of a semiconductor device comprising: at least one reference mark formed in a rectangular shape and comprising sides in which fine patterns are formed; and at least one comparison mark formed in a rectangular shape smaller than the rectangular shape of the at least one reference mark and formed of fine patterns, wherein the number of comparison marks is equal to the number of reference marks, wherein the at least one reference mark and comparison mark are formed on different thin films formed on a semiconductor substrate to facilitate inspection of alignment states of the thin films, and wherein the overlay mark reflects an effect of aberration on patterns of memory cells through the fine patterns during a calculation of MR (mis-registration). 2. The overlay mark of claim 1, wherein the fine patterns of the at least one reference mark and the comparison mark comprise dots or stripe shape patterns. 3. The overlay mark of claim 2, wherein at least one reference mark comprises four (4) reference marks and wherein at least one comparison mark comprises four (4) comparison marks, one of the at least one reference marks and one of the comparison marks are disposed on each of four quadrants of the overlay mark, wherein the overlay mark has a rectangular shape, and wherein each comparison mark is disposed inside a respective reference mark. 4. The overlay mark of claim 3, wherein a first reference mark of the four reference marks and a first comparison mark corresponding to the first reference mark are disposed on a first quadrant, a second reference mark and a second comparison mark corresponding to the second reference mark are disposed on a second quadrant, a third reference mark and a third comparison mark corresponding to the third reference mark are disposed on a third quadrant, and a fourth reference mark and a fourth comparison mark corresponding to the fourth reference mark are disposed on a fourth quadrant, wherein the fine patterns comprise stripe shapes in a first direction in the first reference and comparison marks, wherein the fine patterns comprise dot shapes in the second reference and comparison marks, wherein the fine patterns comprise stripe shapes in a second direction in the fourth reference and comparison marks, wherein the fine patterns comprise stripe shapes in the second direction in two facing sides of the third reference mark, wherein the fine patterns comprise stripe shapes in the first direction in the other two sides of the third reference mark, and wherein the fine patterns comprise stripe shapes in the second or first direction in the third comparison mark. 5. The overlay mark of claim 4, wherein corner portions of the third reference mark are devoid of the fine patterns. 6. The overlay mark of claim 4, wherein fine patterns protrude from corner portions of the third reference mark. 7. The overlay mark of claim 4, wherein the four reference marks and the four comparison marks are configured to facilitate inspection of alignment states of at least two thin films. 8. The overlay mark of claim 7, wherein the four reference marks are formed in a first thin film formed on the semiconductor substrate and the four comparison marks are formed in a second thin film formed on the first thin film so as to facilitate inspection of the alignment states of the at least two thin films, wherein the four comparison marks are positioned inside corresponding ones of the four reference marks. 9. The overlay mark of claim 8, wherein different weights are applied to the four reference marks and the four comparison marks to improve inspection of alignment states of the thin films. 10. The overlay mark of claim 7, wherein the four reference marks and the four comparison marks are disposed in thin films formed on the semiconductor substrate so as to facilitate inspection of alignment states of three or five thin films. 11. The overlay mark of claim 10, wherein the first reference mark is formed in a first thin film formed on the semiconductor substrate, the first comparison mark and the second reference mark are formed in a second thin film formed on the first thin film, wherein the first comparison mark is positioned inside the first reference mark, the second comparison mark and the third reference mark are formed in a third thin film formed on the second thin film, wherein the second comparison mark is positioned inside the second reference mark, the third comparison mark and the fourth reference mark are formed in a fourth thin film formed on the third thin film, wherein the third comparison mark is positioned inside the third reference mark, and the fourth comparison mark is formed in a fifth thin film formed on the fourth thin film, wherein the fourth comparison mark is positioned inside the fourth reference mark so as to facilitate inspection of alignment states of five thin films. 12. The overlay mark of claim 3, wherein each of the four comparison marks is divided into four rectangular portions, wherein stripe shaped fine patterns are formed in the second direction in two of the four rectangular portions formed along one diagonal direction and in the first direction in the other two of the four rectangular portions formed along another diagonal direction. 13. An overlay mark of a semiconductor device comprising: a mark frame having a rectangular shape, comprising four rectangular spaces formed in a first thin film formed on a semiconductor substrate and comprising sides in which fine patterns are formed; and four comparison marks formed in or over the first thin film, positioned in the mark frame, formed of fine patterns, and having rectangular shapes, wherein the four comparison marks are formed in different thin films formed on the semiconductor substrate so as to be used to inspect alignment states of the different thin films, and wherein the overlay mark reflects an effect of aberration on patterns of memory cells through the fine patterns during a calculation of MR (mis-registration). 14. The overlay mark of claim 13, wherein protrusions are formed at corner portions of the mark frame. 15. The overlay mark of claim 13, wherein the mark frame and a first comparison mark of the four comparison marks are formed in a first thin film formed on the semiconductor substrate, a second comparison mark is formed in a second thin film that is formed on the first thin film, a third comparison mark is formed in a third thin film that is formed on the second thin film, and a fourth comparison mark is formed in a fourth thin film that is formed on the third thin film, so as to be used to inspect alignment states of the mark frame and the first through fourth thin films. 16. A semiconductor device comprising: a substrate; a plurality of thin films formed on the substrate; and the overlay mark of claim 1 formed in the plurality of thin films to facilitate inspection of alignment states of the plurality of thin films. 17. The semiconductor device of claim 16, wherein the reference and comparison marks comprise dots or striped shaped fine patterns. 18. The semiconductor device of claim 17, wherein: the at least one reference mark comprises four (4) reference marks and the at least one comparison mark comprises four (4) comparison marks; and one of the reference marks is disposed on each of four quadrants of the overlay mark, and a corresponding comparison mark is disposed inside the reference mark, wherein the overlay mark has a rectangular shape. 19. The semiconductor device of claim 18, wherein a first reference mark of the four reference marks and a first comparison mark corresponding to the first reference mark are disposed on a first quadrant, a second reference mark and a second comparison mark corresponding to the second reference mark are disposed on a second quadrant, a third reference mark and a third comparison mark corresponding to the third reference mark are disposed on a third quadrant, and a fourth reference mark and a fourth comparison mark corresponding to the fourth reference mark are disposed on a fourth quadrant, wherein the fine patterns comprise stripe shapes in a first direction in the first reference and comparison marks, the fine patterns comprise dot shapes in the second reference and comparison marks, the fine patterns comprise stripe shapes in a second direction in the fourth reference and comparison marks, the fine patterns comprise stripe shapes in the second direction in two facing sides of the third reference mark, the fine patterns comprise stripe shapes in the first direction in the other two sides of the third reference mark, and the fine patterns comprise stripe shapes in the second or first direction in the third comparison mark. 20. The semiconductor device of claim 19, wherein the four reference marks and the four comparison marks are configured to facilitate inspection of alignment states of at least two thin films.
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