Polishing Composition for Silicon Wafer and Polishing Method of Silicon Wafer
원문보기
IPC분류정보
국가/구분
United States(US) Patent
공개
국제특허분류(IPC7판)
B24B-037/04
C09K-003/14
H01L-021/304
H01L-021/02
출원번호
US-0307056
(2006-10-18)
공개번호
US-0311947
(2009-12-17)
우선권정보
JP-2006-185974(2006-07-05)
국제출원번호
PCT/JP06/320758
(2006-10-18)
발명자
/ 주소
Iwata, Naoyuki
Nagashima, Isao
출원인 / 주소
Dupont AurProducts NanoMaterials Limited Company
대리인 / 주소
Workman Nydegger
인용정보
피인용 횟수 :
0인용 특허 :
0
초록▼
The present invention provides a polishing composition used in a polishing process of a silicon wafer, which has an improved smoothness and is environment-friendly. The polishing composition for the silicon wafer of the present invention comprises a metal oxide, an alkaline substance and water, wher
The present invention provides a polishing composition used in a polishing process of a silicon wafer, which has an improved smoothness and is environment-friendly. The polishing composition for the silicon wafer of the present invention comprises a metal oxide, an alkaline substance and water, wherein the alkaline substance is guanidines. Another polishing composition for a silicon wafer of the present invention comprises an alkaline substance and water, wherein the alkaline substance is guanidines. These polishing compositions may further comprise a chelating agent. The metal oxide is preferably a cerium oxide or a silicon oxide. The present invention encompasses a polishing method using the above polishing composition and a kit for the above polishing composition.
대표청구항▼
1. An polishing composition for a silicon wafer comprising: a metal oxide, an alkaline substance and water, wherein the alkaline substance is guanidines. 2. An polishing composition for a silicon wafer comprising: an alkaline substance and water, wherein the alkaline substance is guanidines. 3
1. An polishing composition for a silicon wafer comprising: a metal oxide, an alkaline substance and water, wherein the alkaline substance is guanidines. 2. An polishing composition for a silicon wafer comprising: an alkaline substance and water, wherein the alkaline substance is guanidines. 3. An polishing composition for a silicon wafer according to claim 1, further comprising a chelating agent. 4. An polishing composition for a silicon wafer according to claim 1, wherein the guanidines are selected from guanidine, guanidine carbonate, guanidine hydrochloride, aminoguanidine, aminoguanidine carbonate, aminoguanidine hydrochloride, biguanide, biguanide carbonate, biguanide hydrochloride, or sulfamic acid salt of guanidine and in a case where the guanidines are hydrochlorides, another alkaline substance is also used for increasing pH. 5. An polishing composition for a silicon wafer according to claim 3, wherein the chelating agent is selected from ethylene diamine tetraacetic acid, diethylenetriamine pentaacetic acid, nitrilotriacetic acid, N-hydroxyethylethylene diaminetriacetic acid, or hydroxyethyliminodiacetic acid. 6. An polishing composition for a silicon wafer according to claim 1, wherein the polishing composition is diluted before polishing the silicon wafer. 7. An polishing composition for a silicon wafer according to claim 1, wherein the polishing composition has pH of 10.2 to 12.0. 8. An polishing composition for a silicon wafer according to claim 1, wherein the metal oxide is selected from cerium oxide or silicon oxide. 9. A polishing method of a silicon wafer comprising: polishing a silicon wafer with supplying a polishing composition which comprises colloidal ceria comprising a cerium oxide and water or colloidal silica comprising a silicon oxide and water, and an alkaline polishing composition comprising an alkaline substance and water, wherein the alkaline substance is guanidines. 10. A polishing method of a silicon wafer comprising: polishing a silicon wafer comprising steps of removing an oxidized layer on a silicon wafer surface by polishing the silicon wafer surface with colloidal ceria comprising cerium oxide and water, and subsequently polishing a silicon wafer with an alkaline polishing composition comprising an alkaline substance and water, wherein the alkaline substance is guanidines. 11. A polishing method of a silicon wafer according to claim 9, wherein the polishing composition further comprises a chelating agent. 12. A polishing method of a silicon wafer according to claim 9, wherein the guanidines is selected from guanidine, guanidine carbonate, guanidine hydrochloride, aminoguanidine, aminoguanidine carbonate, aminoguanidine hydrochloride, biguanide, biguanide carbonate, biguanide hydrochloride, or sulfamic acid salt of the guanidine, and in a case where the guanidines are hydrochlorides, another alkaline substance is also used for increasing pH. 13. A polishing method of a silicon wafer according to claim 11, wherein the chelating agent is selected from ethylene diamine tetraacetic acid, diethylenetriamine pentaacetic acid, nitrilotriacetic acid, N-hydroxyethylethylene diaminetriacetic acid, or hydroxyethyliminodiacetic acid. 14. An polishing composition kit for a silicon wafer comprising: a dispersion comprising a cerium oxide or a silicon oxide and water; and an alkaline polishing composition comprising an alkaline substance, which is guanidines, and water. 15. An polishing composition kit for a silicon wafer according to claim 14, wherein the dispersion and/or the alkaline polishing composition further comprise a chelating agent. 16. An polishing composition for a silicon wafer according to claim 2, further comprising a chelating agent. 17. An polishing composition for a silicon wafer according to claim 2, wherein the guanidines are selected from guanidine, guanidine carbonate, guanidine hydrochloride, aminoguanidine, aminoguanidine carbonate, aminoguanidine hydrochloride, biguanide, biguanide carbonate, biguanide hydrochloride, or sulfamic acid salt of guanidine and in a case where the guanidines are hydrochlorides, another alkaline substance is also used for increasing pH. 18. An polishing composition for a silicon wafer according to claim 2, wherein the polishing composition is diluted before polishing the silicon wafer. 19. An polishing composition for a silicon wafer according to claim 2, wherein the polishing composition has pH of 10.2 to 12.0. 20. A polishing method of a silicon wafer according to claim 10, wherein the polishing composition further comprises a chelating agent. 21. A polishing method of a silicon wafer according to claim 10, wherein the guanidines is selected from guanidine, guanidine carbonate, guanidine hydrochloride, aminoguanidine, aminoguanidine carbonate, aminoguanidine hydrochloride, biguanide, biguanide carbonate, biguanide hydrochloride, or sulfamic acid salt of the guanidine, and in a case where the guanidines are hydrochlorides, another alkaline substance is also used for increasing pH.
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