This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building u
This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.
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1. A method for polishing a silicon wafer, the method comprising the steps of: obtaining a polishing composition comprising a silicon wafer polishing accelerator, an amide group-containing polymer, and water; andsupplying the polishing composition to the silicon wafer to carried out a final polishin
1. A method for polishing a silicon wafer, the method comprising the steps of: obtaining a polishing composition comprising a silicon wafer polishing accelerator, an amide group-containing polymer, and water; andsupplying the polishing composition to the silicon wafer to carried out a final polishing of the silicon wafer in the presence of an abrasive,whereinthe amide group-containing polymer has a building unit A in its main chain,the building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group, andthe secondary amide group or tertiary amide group has a carbonyl carbon directly coupled to the main chain carbon atom. 2. The method according to claim 1, further comprising the step of rinsing the silicon wafer after the final polishing step by supplying a rinse composition to the silicon wafer, wherein the rinse composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water,the amide group-containing polymer has a building unit A in its main chain,the building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group, anda carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom. 3. The method according to claim 1, further comprising the step of carrying out a preliminary polishing of the silicon wafer prior to the final polishing. 4. The method according to claim 3, further comprising the step of carrying out a lapping of the silicon wafer prior to the preliminary polishing. 5. The method according to claim 1, wherein the amide group-containing polymer has an adsorption ratio of 10% to 80%, when measured by the following method; (1) a test solution L0 is prepared, which comprises 0.018% by mass of the amide group-containing polymer and 0.01% by mass of ammonia in water;(2) a test solution L1 is prepared, which comprises 0.46% by mass of the abrasive, 0.018% by mass of the amide group-containing polymer, and 0.01% by mass of ammonia in water;(3) the test solution L1 is centrifuged to precipitate the abrasive;(4) from the mass WO of the measured polymer in the test solution L0 and mass W1 of the measured polymer in the supernatant of the centrifuged test solution L1, the adsorption ratio of the measured polymer is determined by the equation: Adsorption ratio (%)=[(W0−W1)/W0]×100. 6. The method according to claim 1, wherein the building unit A is obtainable by polymerizing or copolymerizing at least one species selected from the group consisting of monomers represented by the next general formula (1); wherein R1 is a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group; R2 and R3 are identical or different wherein R2 is a hydrogen atom, an alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group or acetyl group with 1 to 18 carbon atoms, or an aromatic group with 6 to 60 carbon atoms, with each of which except for the hydrogen atom including a species having a substituent, and R3 is an alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group or acetyl group with 1 to 18 carbon atoms, or an aromatic group with 6 to 60 carbon atoms, with each of which including a species having a substituent; monomers represented by the next general formula (2): wherein R4 is a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group; and X is (CH2)n (n is an integer between 4 and 6), (CH2)2O(CH2)2 or (CH2)2S(CH2)2; and monomers represented by the next general formula (3): wherein R5 is a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group; R6 and R7 are identical or different, with each being a hydrogen atom, an alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group or acetyl group with 1 to 8 carbon atoms, or an aromatic group with 6 to 60 carbon atoms, with each of which except for the hydrogen atom including a species having a substituent; and a is an integer between 1 and 5. 7. The method according to claim 1, wherein the amide group-containing polymer is nonionic. 8. The method according to claim 1, wherein the abrasive is silica grains. 9. The method according to claim 1, wherein the amide group-containing polymer has a molecular weight of below 40×104. 10. The method according to claim 1, wherein the amide group-containing polymer has a molecular weight of below 5×104. 11. The method according to claim 6, wherein the building unit A is obtainable by polymerizing or copolymerizing the monomer represented by the formula (2) or the monomer represented by the general formula (3), and the amide group-containing polymer has a molecular weight of below 10×104. 12. The method according to claim 1, wherein the silicon wafer polishing composition consists of the abrasive, the silicon wafer polishing accelerator, the amide group-containing polymer, water and optionally a surfactant, an optional polymer and an additive, the additive is selected from the group consisting of a chelating agent, an inorganic acid, an inorganic acid salt, a preservative and an antifungal agent. 13. The method according to claim 2, wherein the rinse composition is free of an abrasive which consists of inorganic grains. 14. The method according to claim 2, wherein the rinse composition is free of an abrasive which consists of inorganic grains, the inorganic grains being silica grains, alumina grains, cerium oxide grains, chromium oxide grains, titanium dioxide grains, zirconium oxide grains, magnesium oxide grains, manganese dioxide grains, zinc oxide grains, red oxide grains, silicon nitride grains, boron nitride grains, silicon carbide grains, boron carbide grains, diamond grains, calcium carbonate grains, and barium carbonate grains. 15. The method according to claim 2, wherein the building unit A of the amide group-containing polymer contained in the rinse composition is obtainable by polymerizing or copolymerizing at least one species selected from the group consisting of monomers represented by the next general formula (1): wherein R1 is a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group; R2 and R3 are identical or different wherein R2 is a hydrogen atom, an alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group or acetyl group with 1 to 18 carbon atoms, or an aromatic group with 6 to 60 carbon atoms, with each of which except for the hydrogen atom including a species having a substituent, and R3 is an alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group or acetyl group with 1 to 18 carbon atoms, or an aromatic group with 6 to 60 carbon atoms, with each of which including a species having a substituent; monomers represented by the next general formula (2): wherein R4 is a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group; and X is (CH2)n (n is an integer between 4 and 6), (CH2)2O(CH2)2 or (CH2)2S(CH2)2; and monomers represented by the next general formula (3): wherein R5 is a hydrogen atom, methyl group, phenyl group, benzyl group, chloro group, difluoromethyl group, trifluoromethyl group, or cyano group; R6 and R7 are identical or different, with each being a hydrogen atom, an alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group or acetyl group with 1 to 8 carbon atoms, or an aromatic group with 6 to 60 carbon atoms, with each of which except for the hydrogen atom including a species having a substituent; and a is an integer between 1 and 5. 16. The method according to claim 2, wherein the amide group-containing polymer contained in the rinse composition is nonionic. 17. The method according to claim 2, wherein the amide group-containing polymer contained in the rinse composition has a molecular weight of below 40×104. 18. The method according to claim 2, wherein the amide group-containing polymer contained in the rinse composition has a molecular weight of below 5×104. 19. The method according to claim 2, wherein the building unit A of the amide group-containing polymer contained in the rinse composition is obtainable by polymerizing or copolymerizing a monomer represented by the general formula (2) or a monomer represented by the general formula (3), and the amide group-containing polymer has a molecular weight of below 10×104. 20. A method for rinsing a silicon wafer, comprising the step of obtaining a rinse composition; andrinsing the silicon wafer by supplying the rinse composition to the silicon wafer; whereinthe rinse composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water,the amide group-containing polymer has a building unit A in its main chain,the building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group, anda carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.
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