In the present invention, in producing a SiC single crystal in accordance with a solution method, a crucible containing SiC as a main component and having an oxygen content of 100 ppm or less is used as the crucible to be used as a container for a Si—C solution. In another embodiment, a sintered bod
In the present invention, in producing a SiC single crystal in accordance with a solution method, a crucible containing SiC as a main component and having an oxygen content of 100 ppm or less is used as the crucible to be used as a container for a Si—C solution. In another embodiment, a sintered body containing SiC as a main component and having an oxygen content of 100 ppm or less is placed in the crucible to be used as a container for a Si—C solution. SiC, which is the main component of these, serves as a source for Si and C and allows Si and C to elute into the Si—C solution by heating. Since the oxygen content of SiC is 100 ppm or less, generation of gas in the Si—C solution is suppressed.
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1: A method of producing a SiC single crystal, which is a method of growing a silicon carbide crystal in accordance with a solution method, comprising using a crucible containing SiC as a main component and having an oxygen content of 100 ppm or less as a container for a Si—C solution,heating the cr
1: A method of producing a SiC single crystal, which is a method of growing a silicon carbide crystal in accordance with a solution method, comprising using a crucible containing SiC as a main component and having an oxygen content of 100 ppm or less as a container for a Si—C solution,heating the crucible to allow Si and C derived from a SiC source, which is a main component of the crucible, to elute from a high temperature region of a crucible surface in contact with the Si—C solution, into the Si—C solution, andbringing a SiC seed crystal from the top of the crucible into contact with the Si—C solution to allow a SiC single crystal to grow on the SiC seed crystal. 2: A method of producing a SiC single crystal, which is a method of growing a silicon carbide crystal in accordance with a solution method, comprising placing a sintered body containing SiC as a main component and having an oxygen content of 100 ppm or less in a crucible serving as a container for a Si—C solution,heating the crucible to allow Si and C derived from a SiC source, which is a main component of the sintered body, to elute from a surface of the sintered body in contact with the Si—C solution, into the Si—C solution, andbringing a SiC seed crystal from the top of the crucible into contact with the Si—C solution to allow a SiC single crystal to grow on the SiC seed crystal. 3: The method of producing a SiC single crystal according to claim 1, wherein a metal element M having an effect of enhancing solubility of C to the Si—C solution is added to the Si—C solution in advance. 4: The method of producing a SiC single crystal according to claim 3, wherein the metal M is at least one of a first metal element M1, which is at least one metal element selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Lu, and a second metal element M2, which is at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni and Cu. 5: The method of growing a silicon carbide crystal according to claim 4, wherein the metal M consists of both the first metal element M1 and the second metal element M2, and the total content of the metal M in the Si—C solution is specified as 1 at % to 80 at %. 6: The method of growing a silicon carbide crystal according to claim 5, wherein the content of the first metal element M1 in the Si—C solution is specified as 10 at % or more; and the second metal element M2 in the Si—C solution is specified as 1 at % or more. 7: The method of producing a SiC single crystal according to claim 3, wherein the metal M is at least one metal element selected from the group consisting of Al, Ga, Ge, Sn, Pb and Zn. 8: The method of growing a silicon carbide crystal according to claim 1, wherein the temperature of the Si—C solution is controlled by the heating to fall in the range of 1300° C. to 2300° C. 9: The method of producing a SiC single crystal according to claim 1, wherein the heating is carried out in a state where the crucible is housed in a second crucible made of a heat-resistant carbon material. 10: The method of producing a SiC single crystal according to claim 2, wherein a metal element M having an effect of enhancing solubility of C to the Si—C solution is added to the Si—C solution in advance. 11: The method of producing a SiC single crystal according to claim 10, wherein the metal M is at least one of a first metal element M1, which is at least one metal element selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Lu, and a second metal element M2, which is at least one element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni and Cu. 12: The method of growing a silicon carbide crystal according to claim 11, wherein the metal M consists of both the first metal element M1 and the second metal element M2, and the total content of the metal M in the Si—C solution is specified as 1 at % to 80 at %. 13: The method of growing a silicon carbide crystal according to claim 12, wherein the content of the first metal element M1 in the Si—C solution is specified as 10 at % or more; and the second metal element M2 in the Si—C solution is specified as 1 at % or more. 14: The method of producing a SiC single crystal according to claim 10, wherein the metal M is at least one metal element selected from the group consisting of Al, Ga, Ge, Sn, Pb and Zn. 15: The method of growing a silicon carbide crystal according to claim 2, wherein the temperature of the Si—C solution is controlled by the heating to fall in the range of 1300° C. to 2300° C. 16: The method of producing a SiC single crystal according to claim 2, wherein the heating is carried out in a state where the crucible is housed in a second crucible made of a heat-resistant carbon material.
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