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High-frequency semiconductor wafer processing method using a negative self-bias 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
  • H01L-021/02
  • H01L-021/31
  • H01L-021/205
출원번호 US-0774127 (1991-10-11)
발명자 / 주소
  • Mintz Donald M. (Sunnyvale CA) Hanawa Hiroji (Santa Clara CA) Someskh Sasson (Los Altos Hills CA) Maydan Dan (Los Altos Hills CA)
출원인 / 주소
  • Applied Materials, Inc. (Santa Clara CA 02)
인용정보 피인용 횟수 : 62  인용 특허 : 0

초록 ▼

A plasma process apparatus capable of operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconven

대표청구항 ▼

A nonreactive, nonselective, inert gas ion, soft plasma etch process comprising the steps of: (a) igniting a plasma containing inert gas ions within a reactor chamber in a plasma reactor; (b) maintaining within said reactor chamber a gas pressure in the range 0.5-30 milliTorr; and (c) providing rf p

이 특허를 인용한 특허 (62)

  1. Yamazaki, Shunpei; Itoh, Kenji; Hayashi, Shigenori, Apparatus for fabricating coating and method of fabricating the coating.
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  2. Blalock, Guy T.; Donohoe, Kevin G., Apparatus for improved low pressure inductively coupled high density plasma reactor.
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  3. Yang, Jang Gyoo; Hoffman, Daniel J.; Carducci, James D.; Buchberger, Jr., Douglas A.; Hagen, Melissa; Miller, Matthew L.; Chiang, Kang-Lie; Delgadino, Gerardo A., Capacitively coupled plasma reactor with uniform radial distribution of plasma.
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  4. Chiang,Tony P.; Leeser,Karl F., Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD).
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  5. Tony P. Chiang ; Karl F. Leeser, Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD).
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  6. Chiang, Tony P.; Leeser, Karl F., Controlling the temperature of a substrate in a film deposition apparatus.
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  7. Yang,Jang Gyoo; Hoffman,Daniel J.; Shannon,Steven C.; Burns,Douglas H.; Lee,Wonseok; Kim,Kwang Soo, Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output.
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  8. Sago, Yasumi; Ikeda, Masayoshi; Tsuchiya, Nobuaki; Sato, Hisaaki, High-frequency plasma processing apparatus.
    상세보기
  9. Sago,Yasumi; Ikeda,Masayoshi; Tsuchiya,Nobuaki; Sato,Hisaaki, High-frequency plasma processing apparatus.
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  10. Mintz Donald M. (Sunnyvale CA) Hanawa Hiroji (Santa Clara CA) Somekh Sasson (Los Altos Hills CA) Maydan Dan (Los Altos Hills CA) Collins Kenneth S. (San Jose CA), High-frequency semiconductor wafer processing apparatus and method.
    상세보기
  11. Gilbert, James A., Inductively-coupled plasma device.
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  12. Gilbert, James A., Inductively-coupled plasma device.
    상세보기
  13. Koo, Il-Gyo; Choi, Myeong Yeol; Collins, Jeremiah H.; Moore, Cameron A.; Rahman, Abdur; Collins, George J., Liquid-gas interface plasma device.
    상세보기
  14. Koo, Il-Gyo; Collins, George J., Liquid-gas interface plasma device.
    상세보기
  15. Hoffman,Daniel J.; Ye,Yan; Katz,Dan; Buchberger, Jr.,Douglas A.; Zhao,Xiaoye; Chiang,Kang Lie; Hagen,Robert B.; Miller,Matthew L., MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression.
    상세보기
  16. Hoffman,Daniel J.; Ye,Yan; Katz,Dan; Buchberger, Jr.,Douglas A.; Zhao,Xiaoye; Chiang,Kang Lie; Hagen,Robert B.; Miller,Matthew L., MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression.
    상세보기
  17. Hideomi Suzawa JP; Shunpei Yamazaki JP; Yasuhiko Takemura JP, MIS semiconductor device having an LDD structure and a manufacturing method therefor.
    상세보기
  18. Suzawa Hideomi,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, MIS semiconductor device having an LDD structure and a manufacturing method therefor.
    상세보기
  19. Suzawa Hideomi,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, MIS semiconductor device having an LDD structure and a manufacturing method therefor.
    상세보기
  20. Hoffman, Daniel J.; Ye, Yan; Katz, Dan; Buchberger, Jr., Douglas A.; Zhao, Xiaoye; Chiang, Kang-Lie; Hagen, Robert B.; Miller, Matthew L., Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression.
    상세보기
  21. Graven Andrew J. ; Schmidt Melvin ; McCuen Kenneth A. ; Ra Yunju, Method and apparatus for clamping a substrate.
    상세보기
  22. Chiang, Tony P.; Leeser, Karl F., Method and apparatus for improved temperature control in atomic layer deposition.
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  23. Barnes Michael S. ; Holland John Patrick, Method of and apparatus for electronically controlling r.f. energy supplied to a vacuum plasma processor and memory for.
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  24. Hoffman,Daniel J.; Gold,Ezra Robert, Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters.
    상세보기
  25. Hoffman,Daniel J.; Gold,Ezra Robert, Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure.
    상세보기
  26. Hoffman, Daniel J.; Gold, Ezra Robert, Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters.
    상세보기
  27. Hoffman, Daniel J., Method of determining plasma ion density, wafer voltage, etch rate and wafer current from applied bias voltage and current.
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  28. Hoffman, Daniel J., Method of determining wafer voltage in a plasma reactor from applied bias voltage and current and a pair of constants.
    상세보기
  29. Yang,Jang Gyoo; Hoffman,Daniel J.; Shannon,Steven C.; Burns,Douglas H.; Lee,Wonseok; Kim,Kwang Soo, Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply output.
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  30. Musaka, Katsuyuki, Method of forming a thin film for a semiconductor device.
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  31. Hoffman, Daniel J., Method of operating a plasma reactor chamber with respect to two plasma parameters selected from a group comprising ion density, wafer voltage, etch rate and wafer current, by controlling chamber parameters of source power and bias power.
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  32. Russell F. Jewett ; Curtis C. Camus, Methods and apparatus for RF power process operations with automatic input power control.
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  33. Jewett Russell F. ; Camus Curtis C., Methods and apparatus for igniting and sustaining inductively coupled plasma.
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  34. Kutney, Michael C.; Hoffman, Daniel J.; Delgadino, Gerardo A.; Gold, Ezra R.; Sinha, Ashok; Zhao, Xiaoye; Burns, Douglas H.; Ma, Shawming, Methods to avoid unstable plasma states during a process transition.
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  35. Ito,Natsuko; Uesugi,Fumihiko; Moriya,Tsuyoshi, Particle-removing method for a semiconductor device manufacturing apparatus.
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  36. Timothy A. Gessert, Plasma & reactive ion etching to prepare ohmic contacts.
    상세보기
  37. Takaki Satoshi,JPX ; Teranishi Koji,JPX, Plasma CVD process.
    상세보기
  38. Trow John ; Ishikawa Tetsuya, Plasma confinement for an inductively coupled plasma reactor.
    상세보기
  39. Hoffman,Daniel J., Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power.
    상세보기
  40. van Os Ron ; Durbin William J. ; Matthiesen Richard H. ; Fenske Dennis C. ; Ross Eric D., Plasma enhanced chemical processing reactor.
    상세보기
  41. van Os Ron ; Durbin William J. ; Matthiesen Richard H. ; Fenske Dennis C. ; Ross Eric D., Plasma enhanced chemical processing reactor and method.
    상세보기
  42. Kaji, Tetsunori; Tachi, Shinichi; Otsubo, Toru; Watanabe, Katsuya; Mitani, Katsuhiko; Tanaka, Junichi, Plasma processing apparatus and plasma processing method.
    상세보기
  43. Buchberger, Jr.,Douglas A.; Hoffman,Daniel J.; Regelman,Olga; Carducci,James; Horioka,Keiji; Yang,Jang Gyoo, Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface.
    상세보기
  44. Hoffman, Daniel J.; Lindley, Roger A.; Kutney, Michael C.; Salinas, Martin J.; Tavassoli, Hamid F.; Horioka, Keiji; Buchberger, Jr., Douglas A., Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction.
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  45. Hoffman, Daniel J.; Yin, Gerald Zheyao, Plasma reactor with overhead RF electrode tuned to the plasma.
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  46. Hoffman, Daniel J.; Yin, Gerald Zheyao, Plasma reactor with overhead RF electrode tuned to the plasma.
    상세보기
  47. Hoffman,Daniel J.; Yin,Gerald Zheyao; Ye,Yan; Katz,Dan; Buchberger, Jr.,Douglas A.; Zhao,Xiaoye; Chiang,Kang Lie; Hagen,Robert B.; Miller,Matthew L., Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression.
    상세보기
  48. Hoffman,Daniel; Yang,Jang Gyoo; Buchberger, Jr.,Douglas A.; Burns,Douglas, Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent.
    상세보기
  49. Hofman,Daniel J.; Sun,Jennifer Y.; Thach,Senh; Ye,Yan, Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination.
    상세보기
  50. Koo, Il-Gyo; Moore, Cameron A.; Collins, George J., Plasma-based chemical source device and method of use thereof.
    상세보기
  51. Ohmoto Yutaka,JPX ; Fukuyama Ryooji,JPX ; Nawata Makoto,JPX, Plasma-processing method and an apparatus for carrying out the same.
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  52. Coumou, David J., Power distortion-based servo control systems for frequency tuning RF power sources.
    상세보기
  53. Coumou, David J., Power distortion-based servo control systems for frequency tuning RF power sources.
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  54. Johnson, Wayne L.; West, Leonard G., Radio frequency power source for generating an inductively coupled plasma.
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  55. Chiang, Tony P.; Leeser, Karl F., Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD).
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  56. Tony P. Chiang ; Karl F. Leeser, Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD).
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  57. Coumou, David J.; Brown, Dennis M; Radomski, Aaron T.; Oldziej, Mariusz; Chawla, Yogendra K.; Lincoln, Daniel J., Solid-state impedance matching systems including a hybrid tuning network with a switchable coarse tuning network and a varactor fine tuning network.
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  58. Ward, Arlen K.; Sartor, Joe D., System and method for biofilm remediation.
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  60. Koo, Il-Gyo; Moore, Cameron A.; Collins, George J.; Cho, Jin-Hoon, System and methods for plasma application.
    상세보기
  61. Koo, Il-Gyo; Moore, Cameron A.; Collins, George J.; Cho, Jin-Hoon, System and methods for plasma application.
    상세보기
  62. Moore, Cameron A.; Scott, Douglas A.; Collins, George J., System, method and apparatus for generating plasma.
    상세보기

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