초록 ▼

The silicon surface of a wafer is cleaned at room temperature in a separate pre-clean chamber prior to epitaxial deposition. Fluorine atoms generated, for example, from NF.sub.3 gas, enter the pre-clean chamber, contact the silicon surface, and etch away native oxide, contaminated silicon, and other

The silicon surface of a wafer is cleaned at room temperature in a separate pre-clean chamber prior to epitaxial deposition. Fluorine atoms generated, for example, from NF.sub.3 gas, enter the pre-clean chamber, contact the silicon surface, and etch away native oxide, contaminated silicon, and other damage incurred from prior wafer processes. The cleaned wafer is then transferred in an oxygen-free environment to a deposition chamber, for epitaxial deposition. By cleaning at reduced temperatures, autodoping, slip, and other stress-related problems are alleviated. By using a separate chamber for cleaning, system throughput is increased when compared to prior systems using conventional cleaning methods.

대표청구항 ▼

[ We claim:] [1.] A method for cleaning a silicon surface comprising:inserting a wafer into a pre-clean chamber, wherein said pre-clean chamber is separate from a deposition chamber; andintroducing a nitrogen trifluoride gas mixture into said pre-clean chamber, wherein said wafer in said pre-clean c

[ We claim:] [1.] A method for cleaning a silicon surface comprising:inserting a wafer into a pre-clean chamber, wherein said pre-clean chamber is separate from a deposition chamber; andintroducing a nitrogen trifluoride gas mixture into said pre-clean chamber, wherein said wafer in said pre-clean chamber is at a temperature lower than a temperature for epitaxial deposition.