A sensor chip connected to a signal processing IC is provided on a die pad, a stationary electrode and a movable electrode are arranged on a semiconductor substrate of the sensor chip, the stationary electrode and movable electrode are covered with a protective cap, a shield electrode layer is embed
A sensor chip connected to a signal processing IC is provided on a die pad, a stationary electrode and a movable electrode are arranged on a semiconductor substrate of the sensor chip, the stationary electrode and movable electrode are covered with a protective cap, a shield electrode layer is embedded in a top face part of a semiconductor substrate, and these elements are sealed with a sealing resin, thus, a potential of the movable electrode is obtained from an output potential of a capacity/voltage conversion circuit of a signal processing IC, and at least one of the shield electrode layer and protective cap is electrically connected to the movable electrode to thereby make identical to each other in potential.
대표청구항▼
1. A semiconductor acceleration sensor comprising:a sensor chip connected to a signal processing IC on a die pad, said sensor chip having a semiconductor substrate;a stationary electrode and a movable electrode arranged on said semiconductor substrate of said sensor chip;a protective cap covering sa
1. A semiconductor acceleration sensor comprising:a sensor chip connected to a signal processing IC on a die pad, said sensor chip having a semiconductor substrate;a stationary electrode and a movable electrode arranged on said semiconductor substrate of said sensor chip;a protective cap covering said stationary electrode and said movable electrode;a shield layer which is embedded in a top face part of said semiconductor substrate; anda sealing resin configured to seal said stationary electrode and said movable electrode,wherein at least one of said shield layer and said protective cap is electrically connected to said movable electrode, thereby being identical to each other in potential. 2. The semiconductor acceleration sensor as claimed in claim 1, wherein an output terminal of a capacity/voltage conversion circuit of said signal processing IC and a top face of said sensor chip are connected to each other via a bonding wire. 3. The semiconductor acceleration sensor as claimed in claim 1, wherein, in a bonding arrangement in which said protective cap is bonded on said semiconductor substrate, there is provided a laminate structure in which an insulation nitride film is formed on said shield layer, a semiconductor support layer is formed on said insulation nitride film, an insulation oxide film is formed on said semiconductor support layer, and a bonding semiconductor layer to be used for cap bonding is formed on the insulation oxide film. 4. The semiconductor acceleration sensor as claimed in claim 3, wherein a hole part is provided in said insulation nitride film, a portion at which impurities of a constituent material of said semiconductor support layer is dispersed is formed in a partial region of said bonding semiconductor layer, an electrically conductive path which is partially electrically conductive from said shield layer to said protective cap via the hole part formed in said insulation nitride film, said semiconductor support layer, and said impurity dispersion part is formed, and said shield layer and said protective cap are electrically connected to each other via said electrically conductive path. 5. The semiconductor acceleration sensor as claimed in claim 4, wherein said movable electrode and said shield layer are electrically connected to each other via said electrically conductive path formed on a part of said semiconductor support layer of said protective cap. 6. The semiconductor acceleration sensor as claimed in claim 1, wherein a potential of said movable electrode is obtained as an output potential of a capacity/voltage conversion circuit of said signal processing IC. 7. The semiconductor acceleration sensor as claimed in claim 1, wherein a metal film is formed on an outer face of said protective cap, said signal processing IC is provided with a terminal part having a same potential as said movable electrode, and said terminal part having said same potential and the metal film on the outer face of said protective cap are electrically connected to each other via a bonding wire. 8. The semiconductor acceleration sensor as claimed in claim 1, wherein a hole part is provided on a part of an insulation oxide film laminated on the semiconductor substrate top face part of said sensor chip, and a semiconductor material is filled to be doped in the hole part, whereby said shield layer and the semiconductor substrate of said sensor chip are electrically connected to each other. 9. The semiconductor acceleration sensor as claimed in claim 6, wherein the semiconductor substrate of said sensor chip is bonded on said die pad by an electrically conductive adhesive agent, said signal processing IC is connected onto said die pad by an insulation adhesive agent, an output terminal of the capacity/voltage conversion circuit of said signal processing IC and said die pad are connected to each other via a bonding wire, and the semiconductor substrate of said sensor chip and said movable electrode are identical to each other in potential. 10. The semiconductor acceleration sensor as claimed in claim 1, wherein said movable electrode is configured to move toward said stationary electrode along said shield layer. 11. The semiconductor acceleration sensor as claimed in claim 1, wherein said signal processing IC comprises:a capacity/voltage conversion circuit electrically connected to said movable electrode and configured to detect a capacitance change between said stationary electrode and said movable electrode and to convert the detected capacitance into a voltage,wherein an output of said capacity/voltage conversion circuit is electrically connected to said at least one of said shield layer and said protective cap. 12. The semiconductor acceleration sensor as claimed in claim 1, wherein said protective cap and said movable electrode are electrically connected to said signal processing IC, thereby being identical to each other in potential. 13. The semiconductor acceleration sensor as claimed in claim 1, wherein said movable electrode and said at least one of said shield layer and said protective cap are electrically connected to each other via said signal processing IC.
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이 특허에 인용된 특허 (4)
Pangerl Michael A. (Crystal MN), Accelerometer incorporating a driven shield.
Ristic Ljubisa (Paradise Valley AZ) Koury Daniel N. (Mesa AZ) Schmiesing John E. (Tempe AZ) Gutteridge Ronald J. (Paradise Valley AZ) Hughes Henry G. (Scottsdale AZ), Electronic device enclosure including a conductive cap and substrate.
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