초록 ▼

Disclosed are multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist st

Disclosed are multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials. These underlayer films include the group consisting of novolac based resists whose processing conditions are controlled, polyarylsulfones such as the BARL material, polyhydroxystyrene based derivatives, an example being a copolymer of polyhydroxystyrene and polyhydroxystyrene reacted with anthracenemethanol that contains a cross-linker, and acid catalyst (thermal acid generator), polyimides, polyethers in particular polyarylene ethers, polyarylenesulfides, polycarbonates such as polyarylenecarbonates, epoxies, epoxyacrylates, polyarylenes such as polyphenylenes, polyarylenevinylenes such as polyphenylenevinylenes, polyvinylcarbazole, cyclicolefins, and polyesters. Such films have index of refraction and extinction coefficient tunable from about 1.4 to about 2.1 and from about 0.1 to about 0.6 at UV and DUV wavelengths, in particular 365, 248, 193 and 157 nm and EUV. Moreover, underlayer films produced in the present invention do not interact with the resist limiting interfacial mixing and contamination of resist by an outgassing product. The bilayer and TSI resist structures can be used for 248, 193, 157, EUV, x-ray, e-beam, and ion beam technology.

대표청구항 ▼

Having thus described our invention, what we claim as new and desire to secure by Letters Patent is: 1. A method comprising: disposing on a surface, a layer of polymeric resin material, said layer of polymeric resin material having a thickness of between about 1000 Å and 10000 Å and com

Having thus described our invention, what we claim as new and desire to secure by Letters Patent is: 1. A method comprising: disposing on a surface, a layer of polymeric resin material, said layer of polymeric resin material having a thickness of between about 1000 Å and 10000 Å and comprising an optically tuned planarizing layer, said tuned layer having an index of refraction layer (n) from about 1.4 to about 2.1, and an extinction coefficient (k) from about 0.1 to 0.6 at 365, 248 193 and 157 nm, said polymeric resin being selected from the group consisting of novolac/diazonapthoquinone resin, polysulfones, polyhydroxystyrene based materials, polyimide materials cast from solvents substantially free of amines, and blends thereof, said resin containing a covalently bonded chromophore used to modulate the optical properties of said material and a variety of wavelengths; a polyfunctionalized crosslinking agent selected from the group consisting of mono-, di-, multi hydroxy substituted methylphenols, aminoplasts, urea resins, glycoluril resins, melamines; and a thermal acid generator comprising compounds that undergo catastrophic decomposition at a given threshold temperature that results in the formation of one or more molecules of a strong acid; disposing on said layer of polymeric resin material, a layer of resist material containing photosensitive elements; said layer of polymeric resin material having a crosslink density sufficiently high that said polymeric resin material and said resist material do not substantially intermix; said layer of polymeric resin material being thicker than said layer of resist material, and forming a multilayer resist structure exhibiting sub 200 nm resolution, said multilayer resist comprising a first layer having a thickness of between about 1000A and 4000A on a second layer having a thickness between about 1000 A and 3.0 μm. 2. A method according to claim 1, wherein said layer of material is novolac. 3. A method according to claim 1, wherein said resist is exposed to energy to form a pattern in said resist. 4. A method according to claim 3, wherein said energy is a beam selected from the group consisting of electromagnetic radiation and a particle beam. 5. A method according to claim 1 wherein said crosslink density is dependent upon the processing conditions comprising temperature, time, the formulations of said layer of material, the crosslinker that is put into the formulation and the amount of crosslinker. 6. A method according to claim 1 wherein said crosslinking agent is a glycouril resin, said thermal acid generator is p-nitrobenzyl tosylate and said polymeric resin is a copolymer of polyhydroxystyrene and polyhydroxystyrene reacted with an anthracenemethanol.