Method for the production of polymeric membranes having an ordered arrangement of high-aspect-ratio nanopores, by means of heavy ion bombing
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C08J-007/18
B01D-067/00
H01M-002/16
C03C-015/00
G03F-001/00
H01M-008/10
H01M-010/052
출원번호
US-0636000
(2010-12-23)
등록번호
US-9376538
(2016-06-28)
우선권정보
EP-10425087 (2010-03-23)
국제출원번호
PCT/IB2010/056057
(2010-12-23)
§371/§102 date
20120919
(20120919)
국제공개번호
WO2011/117692
(2011-09-29)
발명자
/ 주소
Pullini, Daniele
Sgroi, Mauro
출원인 / 주소
C.R.F. SOCIETA CONSORTILE PER AZIONI
대리인 / 주소
Heslin Rothenberg Farley & Mesiti P.C.
인용정보
피인용 횟수 :
0인용 특허 :
1
초록▼
A nanoporous polymeric membrane is obtained by bombing a polymer film by means of high energy focused heavy ion beams and subsequently performing chemical etching to remove the portions of the polymer film in the zones degraded by the ion bombing, in such a manner to obtain pores passing through the
A nanoporous polymeric membrane is obtained by bombing a polymer film by means of high energy focused heavy ion beams and subsequently performing chemical etching to remove the portions of the polymer film in the zones degraded by the ion bombing, in such a manner to obtain pores passing through the polymer film. The heavy ion bombing is performed after interposing between the source of ions and the polymer film, adjacent to the film, an amplitude mask having an ordered arrangement of nanopores and having sufficient thickness to prevent the passage of the heavy ions that are not directed through the pores of said amplitude mask, in such a manner to obtain in the polymer fill an ordered arrangement of nanopores having an aspect-ratio at least exceeding 10 and preferably exceeding 100.
대표청구항▼
1. A method for the production of a nanoporous polymeric membrane, comprising positioning an opaque layer of material entirely opaque to ions over a polymer film and depositing an aluminum layer over said opaque layer, transforming said aluminum layer into anodic porous alumina by an anodisation met
1. A method for the production of a nanoporous polymeric membrane, comprising positioning an opaque layer of material entirely opaque to ions over a polymer film and depositing an aluminum layer over said opaque layer, transforming said aluminum layer into anodic porous alumina by an anodisation method, the transforming forming a barrier layer inside and at a bottom of pores of the anodic porous alumina;eliminating the barrier layer through chemical etching, in such a manner to define channels passing through the layer of anodic porous alumina;chemically etching the opaque layer through the pores of the anodic porous alumina in such a manner to obtain in said opaque layer an ordered honeycomb arrangement of mask nanopores corresponding to the arrangement of the pores of the anodic porous alumina and thus forming an amplitude mask in the opaque layer;removing the anodic porous alumina;interposing the amplitude mask between a source of heavy ions and a polymer film, in proximity to the film, the amplitude mask having the ordered honeycomb arrangement of mask nanopores and thickness sufficient to prevent the passage of the heavy ions that are not directed through the mask nanopores of the amplitude mask;bombing the polymer film by a high energy focused heavy ion beam through the amplitude mask having the ordered honeycomb arrangement of mask nanopores, so that a corresponding ordered honeycomb distribution of polymer nanopores is obtained in said polymer film;performing a chemical etching of the film after the bombing to remove the portions of said film in zones degraded by the ion bombing in such a manner to obtain pores passing through the film; andsaid polymer nanopores obtained in the polymer film having an aspect-ratio at least exceeding 10. 2. A method for the production of a nanoporous polymeric membrane, comprising positioning a layer of gold, indium or tin oxide over a polymer film and then depositing a layer of aluminum thereon,transforming said aluminum layer into anodic porous alumina by means of an anodisation method,using the layer of gold, indium or tin oxide as an electrode for electrodepositing a metal into the pores of the anodic porous alumina, in such a manner to obtain metal nanowires in a matrix,dissolving the anodic porous alumina through chemical etching in such a manner to obtain an ordered distribution of nanowires adhering to a polymer sublayer and to the layer of gold, indium or tin oxide to form an amplitude mask,interposing the amplitude mask between a source of heavy ions and a polymer film, in proximity to the film, the amplitude mask having the ordered honeycomb arrangement of mask nanopores and thickness sufficient to prevent the passage of the heavy ions that are not directed through the mask nanopores of the amplitude mask;bombing the polymer film by a high energy focused heavy ion beam through the amplitude mask having the ordered honeycomb arrangement of mask nanopores, so that a corresponding ordered honeycomb distribution of polymer nanopores is obtained in said polymer film;performing a chemical etching of the film after the bombing to remove the portions of said film in zones degraded by the ion bombing in such a manner to obtain pores passing through the film; andsaid polymer nanopores obtained in the polymer film having an aspect-ratio at least exceeding 10. 3. The method according to claim 1, wherein the amplitude mask always remains at a fixed position with respect to the beam of heavy ions, while the polymer film is displaced in the longitudinal direction thereof, orthogonally to the beam of heavy ions. 4. The method according to claim 1, wherein the amplitude mask and the polymer film remain at fixed position during the heavy ion bombing. 5. The method according to claim 4, wherein the amplitude mask is maintained spaced from the polymer film. 6. The method according to claim 3, wherein the amplitude mask is maintained in contact with said polymer film during the heavy ion bombing. 7. The method according to claim 2, wherein the amplitude mask always remains at a fixed position with respect to the beam of heavy ions, while the polymer film is displaced in the longitudinal direction thereof, orthogonally to the beam of heavy ions. 8. The method according to claim 2, wherein the amplitude mask and the polymer film remain at fixed position during the heavy ion bombing.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (1)
Stumbo David P. (1654 Harold St. Houston TX 77006) Wolfe John C. (5343 Queens Loch Houston TX 77096) Randall John N. (2906 Ambleside Richardson TX 75082), Alignment technique for masked ion beam lithography.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.