Disclosed is a method to form a titanium nitride (TiN) hard mask in the Damascene process of forming interconnects during the fabrication of a semiconductor device, while the type and magnitude of stress carried by the TiN hard mask is controlled. The TiN hard mask is formed in a multi-layered struc
Disclosed is a method to form a titanium nitride (TiN) hard mask in the Damascene process of forming interconnects during the fabrication of a semiconductor device, while the type and magnitude of stress carried by the TiN hard mask is controlled. The TiN hard mask is formed in a multi-layered structure where each sub-layer is formed successively by repeating a cycle of processes comprising TiN and chlorine PECVD deposition, and N2/H2 plasma gas treatment. During its formation, the stress to be carried by the TiN hard mask is controlled by controlling the number of TiN sub-layers and the plasma gas treatment duration such that the stress may counter-balance predetermined external stress anticipated on a conventionally made TiN hard mask, which causes trench sidewall distortion, trench opening shrinkage, and gap filling problem.
대표청구항▼
1. A method of fabricating a semiconductor device, the method comprising: providing a stack of layers comprising a substrate, an etch stop layer formed over the substrate, and an insulating layer formed over the etch stop layer;determining a number of a titanium nitride (TiN) sub-layers and a durati
1. A method of fabricating a semiconductor device, the method comprising: providing a stack of layers comprising a substrate, an etch stop layer formed over the substrate, and an insulating layer formed over the etch stop layer;determining a number of a titanium nitride (TiN) sub-layers and a duration of a plasma gas treatment to be performed in the formation of each of the TiN sub-layers, wherein the determination is made in such a way that when the TiN hard mask is formed in accordance with the TiN sub-layer number and the duration of the plasma gas treatment, the TiN hard mask will have an internal stress that counter-balances an external stress to be exerted on the TiN hard mask to be formed over the insulating layer; andforming the TiN hard mask over the insulating layer, wherein the TiN hard mask is formed of TiN sub-layers of the determined TiN sub-layer number, and wherein each of the TiN sub-layers is successively formed by a cycle of processes that includes depositing TiN mixed with chlorine and performing a plasma gas treatment for the determined duration. 2. The method of claim 1, wherein the TiN mixed with the chlorine is deposited in a TiCl4 Gas. 3. The method of claim 1, wherein the cycle of processes includes controlling a concentration of the chlorine between about one and about ten atomic percent. 4. The method of claim 1, wherein the TiN mixed with the chlorine is deposited by plasma enhanced chemical vapor deposition (PECVD). 5. The method of claim 1, wherein the plasma gas treatment uses a mixture of nitrogen (N2) and hydrogen (H2) gas. 6. The method of claim 1, wherein the cycle of processes includes controlling a concentration of the chlorine by controlling a duration of the plasma gas treatment in the each cycle. 7. The method of claim 1, further comprising determining the number of sub-layers in the TiN hard mask in consideration of the desired type and magnitude of internal stress in the TiN hard mask. 8. The method of claim 1, further comprising forming a plurality of trenches on the stack of layers, each trench extending into the insulation layer, thereby leaving a plurality of trench sidewalls interweaving the trenches. 9. The method of claim 8, further comprising forming an anti-diffusion barrier film over the plurality of trenches and the plurality of trench sidewalls. 10. A method of fabricating a semiconductor device, the method comprising: determining external stress to be exerted on a model TiN hard mask in a model semiconductor structure, the model semiconductor structure including: a model insulating layer and a plurality of model trenches defined into the model insulating layer thereby to define a plurality of interweaving model trench sidewalls, each of the model trench sidewalls including the model insulating layer, the model TiN hard mask formed over the model insulating layer, and a model anti-diffusion barrier film formed over the model TiN hard mask;determining a number of TiN sub-layers, and a duration of a plasma gas treatment to be performed in the formation of each of the TiN sub-layers, wherein the determination is made in such a way that when a TiN hard mask is formed in accordance with the TiN sub-layer number and the duration of a plasma gas treatment, the TiN hard mask will have an internal stress that counter-balances an external stress;providing a stack of layers including: a substrate; an etch stop layer formed over the substrate; and an insulating layer formed over the etch stop layer; andforming a TiN hard mask over the insulation layer, wherein the TiN hard mask comprises TiN sub-layers of the determined TiN sub-layer number, and wherein each of the TiN sub-layers is successively formed by depositing TiN mixed with chlorine, and treating the deposited TiN sub-layer with a plasma gas for the determined duration. 11. The method of claim 10, wherein the TiN mixed with the chlorine is deposited in a TiCl4 Gas. 12. The method of claim 10, wherein the TiN mixed with the chlorine is deposited by plasma enhanced chemical vapor deposition (PECVD). 13. The method of claim 10, wherein the plasma gas is a mixture of nitrogen (N2) and hydrogen (H2) gas. 14. The method of claim 10, wherein the external stress is determined in consideration of the width and height of the plurality of model trench sidewalls, and the type and thickness of the model anti-diffusion barrier film. 15. The method of claim 10, wherein the duration of a plasma gas treatment is determined in consideration of a relation between the internal stress of the TiN hard mask and a concentration of the chlorine. 16. The method of claim 15, wherein the concentration of the chlorine is controlled to be between about one and about ten atomic percent. 17. The method of claim 10, wherein the number of TiN sub-layers is determined in consideration of a relation between internal stress of the TiN hard mask and a number of TiN sub-layers. 18. The method of claim 10, further comprising forming a plurality of trenches defined into the insulation layer, leaving a plurality of trench sidewalls interweaving the trenches and being topped by the TiN hard mask. 19. The method of claim 18, further comprising forming an anti-diffusion barrier film upon the plurality of trenches and the plurality of trench sidewalls, wherein the anti-diffusion barrier film is made of substantially the same material, and has substantially the same thickness, as the model anti-diffusion barrier film. 20. A method comprising: determining a number of a titanium nitride (TiN) sub-layers and a duration of a plasma gas treatment to be performed in the formation of each of the TiN sub-layers, wherein the determination is made in such a way that when the TiN hard mask is formed in accordance with the TiN sub-layer number and the duration of the plasma gas treatment, the TiN hard mask will have an internal stress that counter-balances an external stress to be exerted on the TiN hard mask to be formed over a semiconductor substrate; andforming the TiN hard mask over the semiconductor substrate, wherein the TiN hard mask is formed of the number of determined TiN sub-layers and wherein each of the TiN sub-layers is successively formed by a cycle of processes that includes depositing TiN mixed with chlorine and performing a plasma gas treatment for the determined duration.
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