[특허]Photoresist defect reduction system and method

[미국특허] Photoresist defect reduction system and method 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	G03F-007/26 G03F-007/40
출원번호	US-0790057 (2013-03-08)
등록번호	US-9017934 (2015-04-28)
발명자 / 주소	Wang, Wen-Yun Chang, Ching-Yu
출원인 / 주소	Taiwan Semiconductor Manufacturing Company, Ltd.
대리인 / 주소	Slater & Matsil, L.L.P.
인용정보	피인용 횟수 : 1 인용 특허 : 77

초록 ▼

A system and method for reducing defects in photoresist processing is provided. An embodiment comprises cleaning the photoresist after development using an alkaline environment. The alkaline environment may comprise a neutral solvent and an alkaline developer. The alkaline environment will modify the attraction between residue leftover from development and a surface of the photoresist such that the surfaces repel each other, making the removal of the residue easier. By removing more residue, there will be fewer defects in the photolithographic process.

대표청구항 ▼

1. A method of manufacturing a semiconductor device, the method comprising: developing a photoresist over a substrate;cleaning the photoresist after the developing, the cleaning the photoresist comprising applying an alkaline environment to a surface of the photoresist to modify the surface of the photoresist to have a first charge and to modify a surface of residue to have the first charge; andafter the cleaning the photoresist, rinsing the photoresist with a mixture of deionized water and surfactants. 2. The method of claim 1, wherein the applying the alkaline environment further comprises applying a neutral solvent and an alkaline developer. 3. The method of claim 2, wherein developing the photoresist uses the alkaline developer. 4. The method of claim 1, wherein the applying the alkaline environment further comprises performing a Standard Clean-1 cleaning process. 5. The method of claim 1, wherein the applying the alkaline environment further comprises applying a cleaning surfactant. 6. The method of claim 5, wherein the cleaning surfactant has the structure where n is between 1 and 15 and wherein the R1 and R2 groups are an alkyl group with a carbon number between 1 and 10. 7. The method of claim 1, wherein the applying the alkaline environment further comprises applying a cleaning additive. 8. The method of claim 7, wherein the cleaning additive has the structure where R1, R2 and R3 are alkyl functional structures with straight, branched, or cyclic structures. 9. A method of manufacturing a semiconductor device, the method comprising: removing a developer from a photoresist, the removing the developer leaving behind a residue; andremoving the residue from the photoresist, the removing the residue further comprising: treating a surface of the residue to have a first charge; andtreating a surface of the photoresist to have the first charge without removing the surface of the photoresist. 10. The method of claim 9, wherein the treating the surface of the photoresist further comprises applying a cleaning solution with a pH greater than 7 onto the surface of the photoresist. 11. The method of claim 10, wherein the cleaning solution comprises an SC-1 cleaning solution. 12. The method of claim 10, wherein the cleaning solution further comprises: a neutral solvent; andan alkaline component, wherein the developer has a first composition and the alkaline component has the first composition. 13. The method of claim 10, wherein the treating the surface of the residue further comprises applying a cleaning surfactant to the surface of the residue. 14. The method of claim 10, wherein the treating the surface of the residue further comprises applying a cleaning additive to the surface of the residue. 15. A method of manufacturing a semiconductor device, the method comprising: applying a photoresist to a substrate;developing the photoresist to form a patterned photoresist; andcleaning the patterned photoresist using an alkaline environment, wherein the alkaline environment is applied by applying a neutral solvent and an alkaline chemical separately to the patterned photoresist. 16. The method of claim 15, wherein the cleaning the patterned photoresist removes residue from the photoresist. 17. The method of claim 16, wherein the cleaning the patterned photoresist chemically modifies a surface of the residue to have a first charge, the top surface of the photoresist having the first charge. 18. The method of claim 16, wherein the residue comprises a carboxylic acid group. 19. The method of claim 15, wherein the alkaline environment further comprises a cleaning surfactant. 20. The method of claim 15, wherein the alkaline environment further comprises a cleaning additive.

이 특허에 인용된 특허 (77)

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Wang, Wen-Yun; Chang, Ching-Yu, Photoresist defect reduction system and method.
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