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NTIS 바로가기韓國眞空學會誌 = Journal of the Korean Vacuum Society, v.13 no.1, 2004년, pp.1 - 8
우형주 (한국지질자원연구원, 입자빔응용팀) , 최한우 (한국지질자원연구원, 입자빔응용팀) , 김준곤 (한국지질자원연구원, 입자빔응용팀) , 지영용 (한국지질자원연구원, 입자빔응용팀)
The SOI wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by TRIM simulation that 65 keV proton implantation is required for the standard SOI wafer (200 nm SOI, 400 nm BOX) fabrication. In order to in...
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Next generation Semiconductor Wafer, SOl wafer and its manufacturing method invented by Canon, Eltran, http://www.canon.com/technology/production /index.com
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