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NTIS 바로가기電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.41 no.11 = no.329, 2004년, pp.7 - 13
Experimental results are presented for the degradation of 3 nm-thick gate oxide under -2.5V
E. Rosenbaum and J. Wu, 'Trap generation and breakdown processes in very thin gate oxides', Microelectronics Reliability, vol. 41, pp.625-632, 2001
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T. Yamamoto, and K. Uwasawa, and T. Mogami, 'Bias temperatre instability in scaled $p^+$ polysilicon gate p-MOSFETs,' IEEE Trans. Electron Devices, vol. 46, pp. 921-926, May. 1999
S. Tsujikawa, Y. Akamatsu, H. Umeda, and J. Yugami, 'Two concerns about NBTI issue: gate dielectric scaling and increasing gate current,' IEEE Int. Reliability Physics Symp., Phoenix, AZ, 2004, pp. 28-34
K. Hess, Theory of semiconductor devices, New York : IEEE Press, 2000. ch.8 and ch.13
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