Lee, Byung-Hyun
(Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd., School of Information and Communication Engineering, Sungkyunkwan University)
,
Kim, Yong-Il
(Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.)
,
Kim, Bong-Soo
(Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.)
,
Woo, Dong-Soo
(Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.)
,
Park, Yong-Jik
(Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.)
,
Park, Dong-Gun
(Advanced Technology Development Team 1, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.)
,
Lee, Si-Hyung
(Process Development Team, Semiconductor R&D Division, Samsung Electronics, Co. Ltd.)
,
Rho, Yong-Han
(School of Information and Communication Engineering, Sungkyunkwan University)
In this study, we investigated effects of hydrogen annealing (HA) and plasma nitridation (PN) applied in order to improve $Si/SiO_2$ interface characteristics of TiN metal gate. In result, HA and PN showed a positive effect decreasing number of interface state $(N_{it})$ respec...
In this study, we investigated effects of hydrogen annealing (HA) and plasma nitridation (PN) applied in order to improve $Si/SiO_2$ interface characteristics of TiN metal gate. In result, HA and PN showed a positive effect decreasing number of interface state $(N_{it})$ respectively. After FN stress for verifying reliability, however, we identified rapid increase of $N_{it}$ for TiN gate with HA, which is attributed to hydrogen related to a change of $Si/SiO_2$ interface characteristic. In contrast to HA, PN showed an improved Nit and gate oxide leakage characteristic due to several possible effects, such as blocking of Chlorine (Cl) diffusion and prevention of thermal reaction between TiN and $SiO_2$.
In this study, we investigated effects of hydrogen annealing (HA) and plasma nitridation (PN) applied in order to improve $Si/SiO_2$ interface characteristics of TiN metal gate. In result, HA and PN showed a positive effect decreasing number of interface state $(N_{it})$ respectively. After FN stress for verifying reliability, however, we identified rapid increase of $N_{it}$ for TiN gate with HA, which is attributed to hydrogen related to a change of $Si/SiO_2$ interface characteristic. In contrast to HA, PN showed an improved Nit and gate oxide leakage characteristic due to several possible effects, such as blocking of Chlorine (Cl) diffusion and prevention of thermal reaction between TiN and $SiO_2$.
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가설 설정
In this study, we investigated the effect of HA and PN applied to improve unstable Si/SiO2 interface characteristics due to an application of TiN metal gate electrode. In result, we could identify that the HA before gate oxide formation is not effective process for complete improvement of Si/SiO2 interface characteristics, resulting in rapid degradation of Si/SiQ? interface characteristics after FN stress for verifying reliability.
제안 방법
6 shows an improvement of gate dielectric leakage characteristic due to an application of PN process compared to TiN(gate without PN, which is also thought as a result originating from the decrease of Nit as well as the decrease of physical thinning of gate oxide. And then, in order to investigate a cause about rapid increase of Nit for TiN gate with HA, we baked FN stressed samples at various temperatures. In result, Fig.
As a direct method to identify improvement of Si/SiO2 interface property, the measurement of Nit using the charge pumping method was carried out. Gate induced drain leakage (GIDL) and sub-threshold 동lope (SS) was measured as an indirect method for identifying improvement of SiO2/Si interface property.
성능/효과
Through the result, it is thought that HA and PN is an effective process for improving Si/SiO2 interface characteristics of TiN gate, and HA is more effective for improving Si/SiO2 interface characteristics than PN due to improvement level.
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