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NTIS 바로가기Journal of electrical engineering & technology, v.9 no.1, 2014년, pp.247 - 253
Arun Samuel, T.S. (Dept. of Electronics and Communication Engineering, Thiagarajar College of Engineering) , Balamurugan, N.B. (Dept. of Electronics and Communication Engineering, Thiagarajar College of Engineering)
In this paper, a new two dimensional (2D) analytical modeling and simulation for a Dual Material Double Gate tunnel field effect transistor (DMDG TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expres...
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