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Journal of electrical engineering & technology, v.9 no.2, 2014년, pp.655 - 661
Samuel, T.S. Arun (Dept. of Electronics and Communication Engineering, Thiagarajar College of Engineering) , Balamurugan, N.B. (Dept. of Electronics and Communication Engineering, Thiagarajar College of Engineering) , Niranjana, T. (Dept. of Electronics and Communication Engineering, Thiagarajar College of Engineering) , Samyuktha, B. (Dept. of Electronics and Communication Engineering, Thiagarajar College of Engineering)
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In this paper, a new two dimensional (2D) analytical modeling and simulation for a surrounding gate tunnel field effect transistor (TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surf...
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