최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기Journal of semiconductor technology and science, v.17 no.2, 2017년, pp.204 - 209
Kim, Hyun-Seop (School of Electrical and Electronic Engineering, Hongik University) , Jang, Won-Ho (School of Electrical and Electronic Engineering, Hongik University) , Han, Sang-Woo (School of Electrical and Electronic Engineering, Hongik University) , Kim, Hyungtak (School of Electrical and Electronic Engineering, Hongik University) , Cho, Chun-Hyung (Department of Electronic & Electrical Engineering, College of Science and Technology, Hongik University) , Oh, Jungwoo (School of Integrated Technology, Yonsei University) , Cha, Ho-Young (School of Electrical and Electronic Engineering, Hongik University)
We have investigated a Mo/Au gate scheme for use in AlGaN/GaN-on-Si HFETs. AlGaN/GaN-on-Si HFETs were fabricated with Ni/Au or Mo/Au gates and their electrical characteristics were compared after thermal stress tests. While insignificant difference was observed in DC characteristics, the Mo/Au gate ...
* AI 자동 식별 결과로 적합하지 않은 문장이 있을 수 있으니, 이용에 유의하시기 바랍니다.
W. Saito, et al., "High Breakdown Voltage AlGaN-GaN Power-HEMT Design and High Current Density Switching Behavior," IEEE Transactions on Electron Devices, Vol. 50, No. 12, pp. 2528-2531, Dec., 2003.
O. Ambacher, et al., "Two-dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polariztion in Undped and Doped AlGaN/GaN Heterostructures," Journal of Applied Physics, Vol. 87, No. 1, pp. 334-344, Jan., 2000.
J.-G. Lee, et al., "State-of-Art AlGaN/GaN-on-Si Heterojunction Field Effect Transistors with Dual Field Plates," Applied Physics Express, Vol. 5, No. 6, p. 066502, May, 2012.
S.-W. Han, et al., "Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterojunction field-effect transistor," Applied Physics Express, Vol. 7, No. 11, p. 111002, Oct., 2014.
Y. Cai, et al., "High-Performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment," IEEE Electron Device Letters, Vol. 26, No. 7, pp. 435-437, Jul., 2005.
S. C. Binari, et al., "Trapping Effects and Microwave Power Performance in AlGaN/GaN HEMTs," IEEE Transactions on Electron Devices, Vol. 48, No. 3, pp. 465-471, Mar., 2001.
S. Yoshida, et al., "A high-power AlGaN/GaN heterojunction field-effect transistor," Solid-State Electronics, Vol. 47, No. 3, pp. 589-592, Mar., 2003.
M. Faqir, et al., "Mechanisms of RF Current Collapse in AlGaN-GaN High Electron Mobility Transistors," IEEE Transactions on Device and Materials Reliability, Vol. 8, No. 2, pp. 240-247, Jun., 2008.
N. Defrance, et al., "AlGaN/GaN HEMT High Power Densities on SiC/ $SiO_2$ /poly-SiC Substrates," IEEE Electron Device Letters, Vol. 30, No. 6, pp. 596-598, Jun., 2009.
A. Sozza, et al., "Evidence of Traps Creation in GaN/AlGaN/GaN HEMTs After a 3000 Hour On-state and Off-state Hot-electron Stress," IEEE International Electron Devices Meeting (IEDM) Technical Digest, 5-7, 4 pp. -593, Dec., 2005.
J.-G. Lee, et al., "Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere," Semiconductor Science and Technology, Vol. 30, No. 11, p. 115008, Oct., 2015.
D. Carisetti, et al., "Thermal laser stimulation technique for AlGaN/GaN HEMT technologies improvement," Proceedings from the 39th International Symposium for Testing and Failure Analysis (ISTFA 2013), 3-7, pp. 386-319, Nov., 2013.
A. Sozza, et al., "Thermal stability of Mo-based Schottky contact for AlGaN/GaN HEMT," Electronics Letters, Vol. 41, No. 16, pp. 927-928, Aug., 2005.
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.