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NTIS 바로가기ETRI journal, v.39 no.2, 2017년, pp.284 - 291
Mao, Ling-Feng (School of Computer & Communication Engineering, University of Science & Technology Beijing)
Drain-induced barrier lowering (DIBL) is one of the main parameters employed to indicate the short-channel effect for nano metal-oxide semiconductor field-effect transistors (MOSFETs). We propose a new physical model of the DIBL effect under two-dimensional approximations based on the energy-conserv...
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