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Chinese Physics B, v.26 no.7, 2017년, pp.077303 -
Zheng, Fang-Lin (Shanghai Key Laboratory of Multidimensional Information Processing and the Department of Electrical Engineering, East China Normal University, Shanghai 200241, China) , Liu, Cheng-Sheng (Shanghai Key Laboratory of Multidimensional Information Processing and the Department of Electrical Engineering, East China Normal University, Shanghai 200241, China) , Ren, Jia-Qi (Shanghai Key Laboratory of Multidimensional Information Processing and the Department of Electrical Engineering, East China Normal University, Shanghai 200241, China) , Shi, Yan-Ling (Shanghai Key Laboratory of Multidimensional Information Processing and the Department of Electrical Engineering, East China Normal University, Shanghai 200241, China) , Sun, Ya-Bin (Shanghai Key Laboratory of Multidimensional Information Processing and the Department of Electrical Engineering, East China Normal University, Shanghai 200241, China) , Li, Xiao-Jin (Shanghai Key Laboratory of Multidimensional Information Processing and the Department of Electrical Engineering, East China Normal University, Shanghai 200241,)
초록이 없습니다.
[1] Guillorn M, Chang J, Bryant A et al 2008 Symposium on VLSI Technology (USA: Honolulu) 12 June 17–19, 2008 Guillorn M, Chang J, Bryant A et al Symposium on VLSI Technology 2008 12
[2] Liu F Y, Liu H Z, Liu B W and Guo Y F 2016 Chin. Phys. B 25 047305 10.1088/1674-1056/25/4/047305 Liu F Y, Liu H Z, Liu B W and Guo Y F Chin. Phys. 1674-1056 25 B 4 047305 2016
[3] Yu J T, Chen S M, Chen J J and Huang P C 2015 Chin. Phys. B 24 119401 10.1088/1674-1056/24/11/119401 Yu J T, Chen S M, Chen J J and Huang P C Chin. Phys. 1674-1056 24 B 11 119401 2015
[4] Fan M M, Xu J P, Liu L, Bai Y R and Huang Y 2015 Chin. Phys. B 24 037303 10.1088/1674-1056/24/3/037303 Fan M M, Xu J P, Liu L, Bai Y R and Huang Y Chin. Phys. 1674-1056 24 B 3 037303 2015
[5] Sun L J, Shang G B, Liu L L, Cheng J, Guo A, Ren Z, Hu S J, Chen S M, Zhao Y H, Chan M, Zhang L, Li X J and Shi Y L 2015 Solid. State. Electron 111 118 10.1016/j.sse.2015.05.033 Sun L J, Shang G B, Liu L L, Cheng J, Guo A, Ren Z, Hu S J, Chen S M, Zhao Y H, Chan M, Zhang L, Li X J and Shi Y L Solid. State. Electron 0038-1101 111 2015 118
[6] Pandey A, Kumar H, Manhas S K, Dasgupta S and Anand B 2016 IEEE Trans. Electron Devices 63 1392 10.1109/TED.2016.2520303 Pandey A, Kumar H, Manhas S K, Dasgupta S and Anand B IEEE Trans. Electron Devices 0018-9383 63 2016 1392
[7] Jeong E Y, Yoon J S, Baek C K, Kim Y R, Hong J H, Lee J S, Baek R H and Jeong Y H 2015 IEEE Trans. Electron Devices 62 3441 10.1109/TED.2015.2462760 Jeong E Y, Yoon J S, Baek C K, Kim Y R, Hong J H, Lee J S, Baek R H and Jeong Y H IEEE Trans. Electron Devices 0018-9383 62 2015 3441
[8] Khakifirooz A and Antoniadis D A 2006 International Electron Devices Meeting (San Francisco, USA, December 11–13, 2006) 1 Khakifirooz A and Antoniadis D A International Electron Devices Meeting 2006 1
[9] Pal P K, Kaushik B K and Dasgupta S 2015 IEEE Trans. Electron Devices 62 1105 10.1109/TED.2015.2400053 Pal P K, Kaushik B K and Dasgupta S IEEE Trans. Electron Devices 0018-9383 62 2015 1105
[10] Liu X, Jin X S and Lee J H 2009 Solid. State. Electron 53 1041 10.1016/j.sse.2009.04.010 Liu X, Jin X S and Lee J H Solid. State. Electron 0038-1101 53 2009 1041
[11] Lee K W, An T Y, Joo S Y, Kwon K W and Kim S Y 2013 IEEE Trans. Electron Devices 60 1786 10.1109/TED.2013.2252467 Lee K W, An T Y, Joo S Y, Kwon K W and Kim S Y IEEE Trans. Electron Devices 0018-9383 60 2013 1786
[12] Chauhan Y S, Lu D D and Sriramkumar V 2015 FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard (London: Academic Press) 157 Chauhan Y S, Lu D D and Sriramkumar V FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard 2015 157
[13] Lacord J, Ghibaudo G and Boeuf F 2012 IEEE Trans. Electron Devices 59 1332 10.1109/TED.2012.2187454 Lacord J, Ghibaudo G and Boeuf F IEEE Trans. Electron Devices 0018-9383 59 2012 1332
[14] Lacord J, Martinie S, Rozeau O, Jaud M A, Barraud S and Barbé J C 2016 IEEE Trans. Electron Devices 63 781 10.1109/TED.2015.2506781 Lacord J, Martinie S, Rozeau O, Jaud M A, Barraud S and Barbé J C IEEE Trans. Electron Devices 0018-9383 63 2016 781
[15] Bansal A, Paul B C and Roy K 2006 IEEE Trans. Comput. Des. Integr. Circuits Syst. 25 2765 10.1109/TCAD.2006.882489 Bansal A, Paul B C and Roy K IEEE Trans. Comput. Des. Integr. Circuits Syst. 25 2006 2765
[16] Synopsys Inc. Sentaurus TCAD manuals, [Online] Available: http://www.synopsys.com
[17] Iwai H 2015 Solid. State. Electron. 112 56 10.1016/j.sse.2015.02.005 Iwai H Solid. State. Electron. 0038-1101 112 2015 56
[18] Mark B 2014 Intel Developer Forum Mark B Intel Developer Forum 2014
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