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High-Mobility P-Type MOSFETs with Integrated Strained-Si0.73Ge0.27 Channels and High-κ/Metal Gates

Chinese physics letters = 中國物理快報, v.33 no.11, 2016년, pp.118502 -   

Mao, Shu-Juan (Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029) ,  Zhu, Zheng-Yong (Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029) ,  Wang, Gui-Lei (Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029) ,  Zhu, Hui-Long (Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029) ,  Li, Jun-Feng (Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029) ,  Zhao, Chao (Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029)

초록이 없습니다.

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