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NTIS 바로가기반도체디스플레이기술학회지 = Journal of the semiconductor & display technology, v.21 no.2, 2022년, pp.85 - 89
이희재 (광운대학교 전자재료공학과) , 김민영 (광운대학교 전자재료공학과) , 문수영 (광운대학교 전자재료공학과) , 변동욱 (광운대학교 전자재료공학과) , 정승우 (광운대학교 전자재료공학과) , 구상모 (광운대학교 전자재료공학과)
We reported on annealing effect on Ga2O3/Al2O3/SiC devices grown by radio frequency sputtering method. Post-deposition annealing at 900 ℃ was performed, which results in crystallization in the Ga2O3 films. The major peaks (-401) and (403) of Ga2O3 which was thermally treated at 900 ℃ a...
Wu, J., Mi, W., Yang, Z., Chen, Y., Li, P., Zhao, J., ... & Luan, C. (2019). Influence of annealing on the structural and optical properties of gallium oxide films deposited on c-sapphire substrate. Vacuum, 167, 6-9.
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