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NTIS 바로가기전기전자학회논문지 = Journal of IKEEE, v.26 no.2, 2022년, pp.306 - 312
변동욱 (Dept. of Electronic materials Engineering, Kwangwoon University) , 이형진 (Dept. of Electronic materials Engineering, Kwangwoon University) , 이희재 (Dept. of Electronic materials Engineering, Kwangwoon University) , 이건희 (Dept. of Electronic materials Engineering, Kwangwoon University) , 신명철 (Dept. of Electronic materials Engineering, Kwangwoon University) , 구상모 (Dept. of Electronic materials Engineering, Kwangwoon University)
We investigated electrical properties and deep level traps in 4H-SiC merged PiN Schottky (MPS) diodes with different barrier heights by different PN ratios and metallization annealing temperatures. The barrier heights of MPS diodes were obtained in IV and CV characteristics. The leakage current incr...
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