![Fig. 5. (a) Summary of process parameters and process schemes of conventional ALD (base) and DF-ALD (DFM-n, n=1-4) utilized in the previous work by Kim.[Kim Ms. thesis] (b) The polarization-electric field curves of 5-8 nm-thick Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> film sandwiched by TiN top and bottom electrode, where the Hf<sub>0.5</sub>Zr0.5O<sub>2</sub> films were deposited using conventional ALD (black curve) and DF-ALD (red curve) (c) The changes in 2P<sub>r</sub> values extracted from the P-E curves in figure b according to the changes in film thickness for the 400 ℃ (left panel) and 500 ℃(right panel) annealed cases. Reproduced from [25] under a CC by 2.0 license.](http://ocean.kisti.re.kr/downfile/bibText/kise/PMGHBJ/2022/v55n5/PMGHBJ_2022_v55n5_247_f0006.png "Fig. 5. (a) Summary of process parameters and process schemes of conventional ALD (base) and DF-ALD (DFM-n, n=1-4) utilized in the previous work by Kim.[Kim Ms. thesis] (b) The polarization-electric field curves of 5-8 nm-thick Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> film sandwiched by TiN top and bottom electrode, where the Hf<sub>0.5</sub>Zr0.5O<sub>2</sub> films were deposited using conventional ALD (black curve) and DF-ALD (red curve) (c) The changes in 2P<sub>r</sub> values extracted from the P-E curves in figure b according to the changes in film thickness for the 400 ℃ (left panel) and 500 ℃(right panel) annealed cases. Reproduced from [25] under a CC by 2.0 license.")
![Fig. 6. (a) A process scheme of atomic layer etching consisting of fluorination (left panel) and ligand exchange (right panel) steps. Reproduced from [28] with permission. Copyright 2022, American Vacuum Society. (b) Simplified process flow for ferroelectric tunnel junction fabrication including thermal ALE of the ferroelectric hafnium zirconium oxide (HZO). (c) Etched HZO thickness as a function of ALE cycles measured by spectroscopic ellipsometry (SE) and x-ray reflectometry (XRR). (d) Tunnel junction read current in the ON- and OFF-state as a function of the HZO thickness. (e) Tunneling electroresistance (TER) and read voltage (Vread) as a function of the HZO thickness. Figures b-e were reproduced from [29] with permission. Copyright 2022, American Institute of Physics.](http://ocean.kisti.re.kr/downfile/bibText/kise/PMGHBJ/2022/v55n5/PMGHBJ_2022_v55n5_247_f0007.png "Fig. 6. (a) A process scheme of atomic layer etching consisting of fluorination (left panel) and ligand exchange (right panel) steps. Reproduced from [28] with permission. Copyright 2022, American Vacuum Society. (b) Simplified process flow for ferroelectric tunnel junction fabrication including thermal ALE of the ferroelectric hafnium zirconium oxide (HZO). (c) Etched HZO thickness as a function of ALE cycles measured by spectroscopic ellipsometry (SE) and x-ray reflectometry (XRR). (d) Tunnel junction read current in the ON- and OFF-state as a function of the HZO thickness. (e) Tunneling electroresistance (TER) and read voltage (Vread) as a function of the HZO thickness. Figures b-e were reproduced from [29] with permission. Copyright 2022, American Institute of Physics.")
![Fig. 7. Cross-sectional transmission electron microscopy images of (a) Mo/Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub>/SiO<sub>x</sub>/Si and (b) Mo/Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub>/TiO<sub>x</sub>/SiO<sub>x</sub>/Si capacitors with Ti sputtering times of 12 s. (c) Polarization-voltage (P- V) of Mo/Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub>/SiO<sub>x</sub>/Si and Mo/Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub>/TiO<sub>x</sub>/ SiO<sub>x</sub>/Si capacitors with Ti sputtering times of 12, 20, and 25 s. (d) Endurance test results of Mo/Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub>/ TiO<sub>x</sub>/SiO<sub>x</sub>/Si capacitors with Ti sputtering times of 12 s. Reproduced from [35] with permission. Copyright 2020, Royal Society of Chemistry.](http://ocean.kisti.re.kr/downfile/bibText/kise/PMGHBJ/2022/v55n5/PMGHBJ_2022_v55n5_247_f0005.png "Fig. 7. Cross-sectional transmission electron microscopy images of (a) Mo/Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub>/SiO<sub>x</sub>/Si and (b) Mo/Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub>/TiO<sub>x</sub>/SiO<sub>x</sub>/Si capacitors with Ti sputtering times of 12 s. (c) Polarization-voltage (P- V) of Mo/Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub>/SiO<sub>x</sub>/Si and Mo/Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub>/TiO<sub>x</sub>/ SiO<sub>x</sub>/Si capacitors with Ti sputtering times of 12, 20, and 25 s. (d) Endurance test results of Mo/Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub>/ TiO<sub>x</sub>/SiO<sub>x</sub>/Si capacitors with Ti sputtering times of 12 s. Reproduced from [35] with permission. Copyright 2020, Royal Society of Chemistry.")
![Fig. 8. (a) Flow chart of the sequential, no-atmosphere processing (SNAP) deposition to fabricate the ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> metalferroelectric- metal (MFM) capacitor. Bottom TiN-Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-top TiN is deposited sequentially without breaking the vacuum. (b) Energy dispersive spectroscopy (EDS) elemental map achieved via crosssectional STEM images. (c) P-E hysteresis loop of the SNAPdeposited MFM capacitor, and (d) time-of-flight secondary ion mass spectrometry (ToF-SIMS) depth-profile of the SNAP-deposited MFM capacitor annealed at 800 ℃. Reprinted from [36], with the permission of AIP Publishing.](http://ocean.kisti.re.kr/downfile/bibText/kise/PMGHBJ/2022/v55n5/PMGHBJ_2022_v55n5_247_f0008.png "Fig. 8. (a) Flow chart of the sequential, no-atmosphere processing (SNAP) deposition to fabricate the ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> metalferroelectric- metal (MFM) capacitor. Bottom TiN-Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-top TiN is deposited sequentially without breaking the vacuum. (b) Energy dispersive spectroscopy (EDS) elemental map achieved via crosssectional STEM images. (c) P-E hysteresis loop of the SNAPdeposited MFM capacitor, and (d) time-of-flight secondary ion mass spectrometry (ToF-SIMS) depth-profile of the SNAP-deposited MFM capacitor annealed at 800 ℃. Reprinted from [36], with the permission of AIP Publishing.")
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2" or "hafnia" or "hafnium oxide" or "ZrO2" or "zirconia" or "zirconium oxide") from 2011 until September 29th, 2022." alt="Fig. 1. Number of new publications (green squares) and citations per year (red dots) on the subject matter according to a Web of Science topic search ("ferroelectric" or "piezoelectric" or "pyroelectric") and ("HfO2" or "hafnia" or "hafnium oxide" or "ZrO2" or "zirconia" or "zirconium oxide") from 2011 until September 29th, 2022." onerror="this.src='/images/noimg.png'" class="objectfit" />
그림
Fig. 1. Number of new publications (green squares) and citations per year (red dots) on the subject matter according to a Web of Science topic search ("ferroelectric" or "piezoelectric" or "pyroelectric") and ("HfO2" or "hafnia" or "hafnium oxide" or "ZrO2" or "zirconia" or "zirconium oxide") from 2011 until September 29th, 2022.
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