[논문]Ag/에폭시간 계면 접착력 향상을 위한 전해 실란 처리

공원효; 박광렬; 류호준; 배인섭; 강성일; 최승회

doi:10.5695/jsse.2023.56.1.77

Ag/에폭시간 계면 접착력 향상을 위한 전해 실란 처리
Electrolytic silane deposition to improve the interfacial adhesion Ag and epoxy substrate 원문보기

한국표면공학회지 = Journal of the Korean institute of surface engineering, v.56 no.1, 2023년, pp.77 - 83

공원효 (한국재료연구원) , 박광렬 (해성DS 주식회사) , 류호준 (해성DS 주식회사) , 배인섭 (해성DS 주식회사) , 강성일 (해성DS 주식회사) , 최승회 (한국재료연구원)

Abstract ▼ AI-Helper

The reliability of leadframe-based semiconductor package depends on the adhesion between metal and epoxy molding compound (EMC). In this study, the Ag surface was electrochemically treated in a solution containing silanes in order to improve the adhesion between Ag and epoxy substrate. After electrochemical treatment, the thin silane layer was deposited on the Ag surface, whereby the peel strength between Ag and epoxy substrate was clearly improved. The improvement of peel strength depended on the functional group of silane, implying the chemical linkage between Ag and epoxy.

주제어

표/그림 (9)

그림 Fig. 1. General mechanism for formation of silane film: (a) hydrolysis of silane and generation of OH groups on the metal surface, (b) bonding of hydrolyzed silane with OH groups on the metal surface and (c) creation of Si-O-Si bonds.
그림 Fig. 2. Experimental procedure used in this study
그림 Fig. 3. (a) Peel strength - strain curve for each samples, and (b) average peel strength derived from (a).
표 Table 1. List of samples used in this study.
그림 Fig. 4. SEM image and EDS results of (a) blank, (b) base, (c) APTES, (d) MPTES, and (e) GPTMS samples.
표 Table 2. Surface roughness of each sample.
그림 Fig. 5. XPS results of each sample: (a) C_1s of APTES, (b) Si_2p of APTES, (c) N_1s of APTES, (d) Ag_3d of APTES, (e) C_1s of MPTES, (f) Si_2p of MPTES, (g) S_2p of MPTES, (h) Ag_3d of MPTES, (i) C_1s of GPTMS, (j) Si_2p of GPTMS, (k) O_1s of GPTMS, and (l)Ag_3d of GPTMS.
표 Table 3. Binding energies and corresponding chemical bonds for XPS analysis.
그림 Fig. 6. Results of depth profiling for (a) APTES, (b) MPTES, and (c) GPTMS. Depth profiling was carried out with A^r+ etching, and the spectrum for Si_2p was obtained for 10 times with 10 second intervals.

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