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NTIS 바로가기전기전자학회논문지 = Journal of IKEEE, v.27 no.1, 2023년, pp.103 - 108
김유림 (Dept. of Energy IT, Far East University) , 이동현 (Dept. of Energy IT, Far East University) , 김민서 (Dept. of Energy IT, Far East University) , 최진우 (Dept. of Energy IT, Far East University) , 강이구 (Dept. of Energy IT, Far East University)
This research was carried out experiments with changing processes and design parameters to optimally design a SiC-based 1200V power MOSFET, and then, essential electrical characteristics were derived. In order to secure the excellence of the trench gate type SiC power MOSFET device to be designed, e...
Mulpuri V. Rao, J. Tucker, O. W. Holland, N.?Papanicolaou, P. H. Chi, J. W. Kretchmer and M.?Ghezzo, "Donor Ion-Implantation Doping into?SiC," Journal of Electronic Materials, Vol.28,?No.3, pp.334-340, 1999.?DOI: 10.1007/s11664-999-0036-8
G. J. Phelps, "Dopant ion implantationsimulations?in 4H-Silicon Carbide," Modelling and Simulation?In Materials Science And Engineering, Vol.12,?pp.1139-1146, 2004.?DOI: 10.1088/0965-0393/12/6/008
Atul Mahajan, and B. J Skromme, "Designand?optimization of junction termination extension?(JTE) for 4H-SiC high voltage Schottky diodes,"?Solid State Electronics, Vol.49, pp.945-955, 2005.?DOI: 10.1016/j.sse.2005.03.020
David C. Sheridan, Guofu Niu, and John D.?Cressler, "Design of single and multiple zonejunction?termination extension structures for SiCpower?devices," Solid State Electronics, Vol.45, pp.1659-?1664, 2001. DOI: 10.1016/S0038-1101(01)00052-1
Reza Ghandi, Benedetto Buono, MartinDomeij, Gunnar Malm, Carl-Mikael Zetterling,?and Mikael Ostling, "High-Voltage 4H-SiC PiN?Diodes With Etched Junction TerminationExtension,"?IEEE Electron Device Letters, Vol.30, No.11,?pp.1170-1172, 2009.?DOI: 10.1109/LED.2009.2030374
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