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NTIS 바로가기Journal of power electronics, v.23 no.4, 2023년, pp.688 - 699
Liu, Fan , Du, Mingxing , Yin, Jinliang , Dong, Chao , Ouyang, Ziwei
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IEEE Trans. Power Electron. J Millán 29 5 2155 2014 10.1109/TPEL.2013.2268900 Millán, J., Godignon, P., Perpiñà, X., et al.: A survey of wide bandgap power semiconductor devices. IEEE Trans. Power Electron. 29(5), 2155-2163 (2014)
IEEE Trans. Electron Devices K Hamada 62 2 278 2015 10.1109/TED.2014.2359240 Hamada, K., Nagao, M., Ajioka, M., et al.: SiC-emerging power device technology for next-generation electrically powered environmentally friendly vehicles. IEEE Trans. Electron Devices 62(2), 278-285 (2015)
IEEE Trans. Ind. Appl. S Yang 47 3 1441 2011 10.1109/TIA.2011.2124436 Yang, S., Bryant, A., Mawby, P., et al.: An industry-based survey of reliability in power electronic converters. IEEE Trans. Ind. Appl. 47(3), 1441-1451 (2011)
IEEE Trans Power Electron. F Yang 35 6 6315 2020 10.1109/TPEL.2019.2950311 Yang, F., Ugur, E., Akin, B.: Evaluation of aging’s effect on temperature-sensitive electrical parameters in SiC MOSFETs. IEEE Trans Power Electron. 35(6), 6315-6331 (2020)
IEEE Trans. Industr. Electron. A Griffo 65 3 2663 2018 10.1109/TIE.2017.2739687 Griffo, A., Wang, J., Colombage, K., et al.: Real-time measurement of temperature sensitive electrical parameters in SiC power MOSFETs. IEEE Trans. Industr. Electron. 65(3), 2663-2671 (2018)
IEEE Trans. Ind. Appl. F Stella 54 4 3453 2018 10.1109/TIA.2018.2812710 Stella, F., Pellegrino, G., Armando, E., et al.: Online junction temperature estimation of SiC power MOSFETs through on-state voltage mapping. IEEE Trans. Ind. Appl. 54(4), 3453-3462 (2018)
IEEE J Emerg Select Top Power Electron. Z Ni 9 5 6408 2021 10.1109/JESTPE.2021.3054018 Ni, Z., Zheng, S., Chinthavali, M.S., et al.: Investigation of dynamic temperature-sensitive electrical parameters for medium-voltage SiC and Si Devices. IEEE J Emerg Select Top Power Electron. 9(5), 6408-6423 (2021)
IEEE Trans. Power Electron. Z Zhang 34 8 7922 2019 10.1109/TPEL.2018.2879511 Zhang, Z., et al.: Online junction temperature monitoring using intelligent gate drive for SiC power devices. IEEE Trans. Power Electron. 34(8), 7922-7932 (2019)
IEEE Trans Power Electron. Q Zhang 36 10 11087 2021 10.1109/TPEL.2021.3072436 Zhang, Q., Zhang, P.: An online junction temperature monitoring method for SiC MOSFETs based on a novel gate conduction model. IEEE Trans Power Electron. 36(10), 11087-11096 (2021)
IEEE Trans. Power Electron. JO Gonzalez 32 10 7954 2017 10.1109/TPEL.2016.2631447 Gonzalez, J.O., Alatise, O., Hu, J., et al.: An investigation of temperature-sensitive electrical parameters for SiC power MOSFETs. IEEE Trans. Power Electron. 32(10), 7954-7966 (2017)
IEEE Trans. Power Electron. J Henn 37 3 3484 2022 10.1109/TPEL.2021.3112337 Henn, J., et al.: Intelligent gate drivers for future power converters. IEEE Trans. Power Electron. 37(3), 3484-3503 (2022)
IEEE J Emerg Select Top Power Electron. P Sun 10 5 5007 2021 10.1109/JESTPE.2021.3117734 Sun, P., et al.: An online junction temperature monitoring correction method for SiC MOSFETs at different parasitic parameters. IEEE J Emerg Select Top Power Electron. 10(5), 5007 (2021)
IEEE Trans. Power Electron. S Jahdi 30 6 3345 2015 10.1109/TPEL.2014.2333474 Jahdi, S., Alatise, O., Ran, L., et al.: Analytical modeling of switching energy of silicon carbide schottky diodes as functions of dIDS/dt and temperature. IEEE Trans. Power Electron. 30(6), 3345-3355 (2015)
IEEE Trans. Ind. Appl. N Fritz 56 4 4089 2020 10.1109/TIA.2020.2995331 Fritz, N., Engelmann, G., Stippich, A., et al.: Toward an in-depth understanding of the commutation processes in a SiC MOSFET switching cell including parasitic elements. IEEE Trans. Ind. Appl. 56(4), 4089-4101 (2020)
IEEE Trans Power Electron. Z Zhang 34 9 9082 2019 10.1109/TPEL.2018.2883454 Zhang, Z., Guo, B., Wang, F.: Evaluation of switching loss contributed by parasitic ringing for fast switching wide band-gap devices. IEEE Trans Power Electron. 34(9), 9082-9094 (2019)
IEEE J Emerg Select Top Power Electron. T Liu 4 3 747 2016 Liu, T., Ning, R., Wong, T.T.Y., et al.: modeling and analysis of SiC MOSFET switching oscillations. IEEE J Emerg Select Top Power Electron. 4(3), 747-756 (2016)
IEEE Trans Circuits Syst II. C Bi 66 5 853 2019 10.1109/TCSII.2019.2908971 Bi, C., Lu, R., Li, H.: Prediction of electromagnetic interference noise in SiC MOSFET module. IEEE Trans Circuits Syst II. 66(5), 853-857 (2019)
IEEE J Emerg Select Top Power Electron. DN Dalal 8 1 298 2020 10.1109/JESTPE.2019.2939644 Dalal, D.N., et al.: Impact of power module parasitic capacitances on medium-voltage SiC MOSFETs switching transients. IEEE J Emerg Select Top Power Electron. 8(1), 298-310 (2020)
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