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NTIS 바로가기Journal of radiation protection and research, v.48 no.3, 2023년, pp.124 - 130
Sung Ho Ahn (Korea Atomic Energy Research Institute) , Gwang Min Sun (Korea Atomic Energy Research Institute)
Background: When bipolar junction transistors (BJTs) are used as switches, their switching characteristics can be deteriorated because the recombination time of the minority carriers is long during turn-off transient. When BJTs operate as low frequency switches, the power dissipation in the on-state...
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