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NTIS 바로가기전기전자학회논문지 = Journal of IKEEE, v.28 no.1, 2024년, pp.104 - 109
정승환 (Dept. of Electronic materials Engineering, Kwangwoon University) , 신명철 (Dept. of Electronic materials Engineering, Kwangwoon University) , (Dept. of Physics, Aix-Marseille University) , 구상모 (Dept. of Electronic materials Engineering, Kwangwoon University)
In this research, we explored the influence of post-annealing atmospheres on the electrical properties of Ga2O3/SiC heterojunction diodes. We fabricated Ga2O3/SiC heterojunction diodes by RF sputtering and after the fabrication the post-annealing in various gas atmospheres was performed. We measured...
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