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NTIS 바로가기IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.25 no.8, 2004년, pp.541 - 543
Xiong, W. , Gebara, G. , Zaman, J. , Gostkowski, M. , Nguyen, B. , Smith, G. , Lewis, D. , Cleavelin, C.R. , Wise, R. , Yu, S. , Pas, M. , King, T.-J. , Colinge, J.P.
Hydrogen anneal is used during FinFET processing to round off the corners of the silicon fins prior to gate oxidation and to smooth the surface of the fin sidewalls. This procedure greatly improves gate leakage and, in addition, reduces the width of the fins, resulting in a lower threshold voltage and improved drain-induced barrier lowering (DIBL) characteristics. Reduction of the leakage current by up to four orders of magnitude is obtained after edge rounding by hydrogen annealing. In addition, a 50% decrease of DIBL is observed, due to fin width reduction.
Doyle, B.S., Datta, S., Doczy, M., Hareland, S., Jin, B., Kavalieros, J., Linton, T., Murthy, A., Rios, R., Chau, R.. High performance fully-depleted tri-gate CMOS transistors. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.24, no.4, 263-265.
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Jong-Tae Park, Colinge, J.-P., Diaz, C.H.. Pi-Gate SOI MOSFET. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.22, no.8, 405-406.
Kuribayashi, Hitoshi, Hiruta, Reiko, Shimizu, Ryosuke, Sudoh, Koichi, Iwasaki, Hiroshi. Shape transformation of silicon trenches during hydrogen annealing. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, vol.21, no.4, 1279-1283.
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Yongxun Liu, Ishii, K., Tsutsumi, T., Masahara, M., Suzuki, E.. Ideal rectangular cross-section Si-Fin channel double-gate MOSFETs fabricated using orientation-dependent wet etching. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.24, no.7, 484-486.
Jeong-Soo Lee, Yang-Kyu Choi, Daewon Ha, Balasubramanian, S., Tsu-Jae King, Bokor, J.. Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.24, no.3, 186-188.
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