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NTIS 바로가기Chinese Physics B, v.19 no.4, 2010년, pp.047307 -
Yan-Rong, Cao (School of Mechano-Electric Engineering, Xidian University, Xi'an 710071, China) , Xiao-Hua, Ma (Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China) , Yue, Hao (Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China) , Shi-Gang, Hu (Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China)
This paper studies the effect of drain bias on ultra-short p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) degradation during negative bias temperature (NBT) stress. When a relatively large gate voltage is applied, the degradation magnitude is much more than the drain voltage w...
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