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IEEE transactions on electron devices, v.65 no.4, 2018년, pp.1653 - 1657
Anvarifard, Mohammad Kazem (Department of Engineering Sciences, Faculty of Technology and Engineering, East of Guilan, University of Guilan, Rasht, Iran) , Orouji, Ali Asghar (Department of Electrical and Computer Engineering, Semnan University, Semnan, Iran)
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This brief is describing a useful idea to reform the distribution of the electric field for nanosilicon-on-insulator metal–oxide–semiconductors-field-effect transistors. The approach we benefit from it is to develop a part of the channel region into the drain region. This technique mod...
Anvarifard, Mohammad K., Orouji, Ali Asghar. Improvement of Electrical Properties in a Novel Partially Depleted SOI MOSFET With Emphasizing on the Hysteresis Effect. IEEE transactions on electron devices, vol.60, no.10, 3310-3317.
ATLAS User’s Manual 2-D Device Simulator 2015
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