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Microelectronics journal, v.40 no.3, 2009년, pp.581 - 583
Saad, I. (School of Engineering & IT, Universiti Malaysia Sabah, 88999 Kota Kinabalu, Sabah, Malaysia) , Tan, M.L.P. , Lee, A.C.E. , Ismail, R. , Arora, V.K.
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The mobility and saturation velocity in the nanoscale metal oxide semiconductor field effect transistor (MOSFET) are revealed to be ballistic; the former in a channel whose length is smaller than the scattering-limited mean free path. The drain-end carrier velocity is smaller than the ultimate satur...
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