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NTIS 바로가기Solid-state electronics, v.111, 2015년, pp.100 - 103
Theodorou, C.G. , Ioannidis, E.G. , Haendler, S. , Dimitriadis, C.A. , Ghibaudo, G.
The impact of the dynamic variability due to low frequency and RTN fluctuations on single MOSFET operation from 14nm FD-SOI technology is investigated for the first time. It is shown that the dynamic variability is enhanced as the rise time and the device area are reduced. Different simulation appro...
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