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NTIS 바로가기Solid-state electronics, v.116, 2016년, pp.60 - 64
Lin, Q. , Zhao, C. , Sheng, N.
This paper studies the hydrogen-induced program state threshold voltage degradation in SONOS wafers, which ultimately impacts wafer sort test yield. During wafer sort step, all individualintegrated circuits noted as dieare tested for functional defects by applying specialtest patternsto them. The pr...
Cypress Semiconduct Ramkumar 1 2013 Cypress SONOS technology
Ramkumar, Krishnaswamy, Bo, Jin. Advantages of SONOS memory for embedded flash technology. EETimes-Asia, Copyright ⓒ 2011 eMedia Asia Ltd.
Nanoscale Res Lett Meena 9 526 2014 10.1186/1556-276X-9-526 Overview of emerging nonvolatile memory technologies
Microelectron Reliab Hsu 47 4 606 2007 10.1016/j.microrel.2007.01.027 Electrical characterization of metal-oxide-high-k dielectric-oxide-semiconductor (MOHOS) structures for memory applications
Watanabe 47 1994 Symp VLSI tech dig tech papers, June 7-9 1994, Honolulu Scaling of tunnel oxide thickness for flash EEPROMs realizing stress-induced leakage current reduction
IEEE Trans Electron Dev ED-24 Chen 584 1997 Threshold-alterable Si-gate MOS devices
J Korean Phys Soc Noh 42 S1412 2003 Mechanisms of hydrogen-induced degradation in ferroelectric thin films for ferroelectric random access memory applications
J Vac Sci Technol A Kapoor 1 2 600 1983 10.1116/1.571966 Hydrogen-related memory traps in thin silicon nitride films
Microelectron Reliab Fleetwood 42 4-5 523 2002 10.1016/S0026-2714(02)00019-7 Effects of hydrogen transport and reactions on microelectronics radiation response and reliability
IEEE Trans Device Mater Reliab Lee 4 1 2004 10.1109/TDMR.2004.824360 Effects of interface trap generation and annihilation on the data retention characteristics of flash memory cells
Shih Y-H, Lue H-T, Hsieh K-Y, Liu R, Lu C-Y. A novel 2-bit/cell nitride storage flash memory with greater than 1M P/E-cycle endurance. IEDM tech dig; 2004. p. 881-4.
IEEE Trans Electron Dev Yang 54 6 1360 2007 10.1109/TED.2007.895242 Modeling and characterization of hydrogen-induced charge loss in nitride-trapping memory
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